TO
-2
20F
BT236X series F and G
6 A Four-quadrant triacs
Rev. 3 — 3 November 2011
Product data sheet
1. Product profile
1.1 General description
Passivated triacs in a full pack, plastic package intended for use in applications requiring
high bidirectional transient and blocking voltage capability and thermal cycling
performance.
1.2 Features and benefits
Isolated package
High I
TSM
1.3 Applications
Lamp dimmers
Motor speed controllers
High inrush resistive loads
Heating and static switching
1.4 Quick reference data
V
DRM
600 V
(BT236X-600_600F_600G)
V
DRM
800 V (BT236X-800_800G)
I
TSM
65 A (t = 20 ms)
I
T(RMS)
6 A
I
GT
35 mA (BT236X-600_800)
I
GT
25 mA (BT236X-600F)
I
GT
50 mA (BT236X-600G_800G)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; isolated
mb
T2
sym051
Simplified outline
Symbol
T1
G
1 2 3
SOT186A (3-lead TO-220F)
NXP Semiconductors
BT236X series F and G
6 A Four-quadrant triacs
3. Ordering information
Table 2.
Ordering information
Package
Name
BT236X-600
BT236X-600F
BT236X-600G
BT236X-800
BT236X-800G
3-lead
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3 lead TO-220 ‘full pack’
Version
SOT186A
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
BT236X-600
BT236X-600F
BT236X-600G
BT236X-800
BT236X-800G
I
T(RMS)
I
TSM
RMS on-state current
non-repetitive peak on-state current
full sine wave; T
h
88
C;
see
Figure 4
and
5
full sine wave; T
j
= 25
C
prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state current
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/s
T2+ G+
T2+ G
T2 G
T2 G+
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
[1]
[1]
Conditions
Min
-
-
-
-
-
-
Max
600
600
600
800
800
6
Unit
V
V
V
V
V
A
-
-
-
65
71
21
A
A
A
2
s
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
+150
125
A/s
A/s
A/s
A/s
A
V
W
W
C
C
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/s.
BT236X_SER_F_G
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 3 November 2011
2 of 13
NXP Semiconductors
BT236X series F and G
6 A Four-quadrant triacs
10
P
tot
(W)
α
003aab307
80
T
h (max)
(
°
C)
89
α
= 180°
120°
90°
α
98
5
60°
30°
107
116
0
0
2
4
6
I
T(RMS)
(A)
125
= conduction angle
Fig 1.
80
I
TSM
(A)
60
Total power dissipation as a function of RMS on-state current; maximum values
003aaa968
40
I
T
20
I
TSM
t
T
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT236X_SER_F_G
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 3 November 2011
3 of 13
NXP Semiconductors
BT236X series F and G
6 A Four-quadrant triacs
10
3
I
TSM
(A)
I
T
003aab308
I
TSM
t
(1)
T
T
j(init)
= 25
°C
max
10
2
(2)
10
10
-5
10
-4
10
-3
10
-2
t
p
( s)
10
-1
t
p
20 ms
(1) dI
T
/dt limit
(2) T2 G+ quadrant
Fig 3.
25
Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab309
I
T(RMS)
(A)
8
I
T(RMS)
(A)
003aab310
20
6
15
4
10
2
5
88
°C
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
T
h
(°C)
150
f = 50 Hz; T
h
88
C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of heatsink
temperature; maximum values
BT236X_SER_F_G
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 3 November 2011
4 of 13
NXP Semiconductors
BT236X series F and G
6 A Four-quadrant triacs
5. Thermal characteristics
Table 4.
Symbol
R
th(j-h)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
[1]
[2]
Min
-
-
-
Typ
-
-
55
Max
4.5
6.5
-
Unit
K/W
K/W
K/W
thermal resistance from junction to see
Figure 6
heatsink
see
Figure 6
thermal resistance from junction to in free air
ambient
[1]
[2]
Full or half cycle with heatsink compound
Full or half cycle without heatsink compound
10
Z
th(j-h)
(K/W)
1
(1)
(2)
003aab331
(3)
(4)
10
−1
P
t
p
t
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional without heatsink compound
(2) Unidirectional with heatsink compound
(3) Bidirectional without heatsink compound
(4) Bidirectional with heatsink compound
Fig 6.
Transient thermal impedance from junction to heatsink as a function of pulse duration
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
T
h
= 25
C unless otherwise specified.
Symbol
V
isol(rms)
Parameter
Conditions
Min
-
Typ
-
Max
2500
Unit
V
RMS isolation voltage from all three terminals to
external heatsink; f = 50 Hz to
60 Hz; sinusoidal waveform;
RH
65 %; clean and dust free
isolation capacitance
from pin 2 to external heatsink;
f = 1 MHz
C
isol
-
10
-
pF
BT236X_SER_F_G
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 3 November 2011
5 of 13
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