Ordering number : ENA1075
2SC5277A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5277A
Features
•
UHF to S-Band Low-Noise Amplifier
OSC Applications
•
•
•
•
: NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
High gain
:
⏐S21e⏐
2
=10dB typ (f=1.5GHz).
High cut-off frequency : fT=8GHz typ.
Low-voltage, low-current operation (VCE=1V, IC=1mA).
: fT=3.5GHz typ.
:
⏐S21e⏐
2
=5.5dB typ (f=1.5GHz).
Ultrasmall-sized package permitting applied sets to be made small and slim.
Low-noise
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
20
10
1.5
30
100
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
O2908AB MS IM TC-00001687 No. A1075-1/6
2SC5277A
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
2
⏐
S21e
⏐
1
2
⏐
S21e
⏐
2
Conditions
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=1V, IC=1mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=10mA, f=1.5GHz
VCE=1V, IC=1mA, f=1.5GHz
VCE=5V, IC=5mA, f=1.5GHz
VCE=2V, IC=3mA, f=1GHz
Ratings
min
typ
max
1.0
10
60*
5
8
3.5
0.45
0.30
8
10
5.5
1.4
0.9
3.0
0.7
270*
Unit
μA
μA
GHz
GHz
pF
pF
dB
dB
dB
dB
NF1
NF2
*
: The 2SC5277A is classified by 10mA hFE as follows :
Marking
Rank
hFE
D1
1
60 to 120
D2
2
90 to 180
D3
3
135 to 270
Package Dimensions
unit : mm (typ)
7027-002
1.6
0.8
0.4
0.4
0.2
1.6
0.5 0.5
1
2
3
0.1
0.3
0 to 0.1
0.1 MIN
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
0.75
0.6
5
3
2
hFE -- IC
VCE=5V
2
fT -- IC
Gain-Bandwidth Product, fT -- GHz
10
7
5
DC Current Gain, hFE
100
7
5
3
2
=5V
VCE
=1V
VCE
3
2
10
7
5
0.1
2
3
5
7 1.0
2
3
5 7 10
2
3
5 7 100
ITR08213
1.0
1.0
2
3
5
7
10
2
3
5
IT14098
Collector Current, IC -- mA
Collector Current, IC -- mA
No. A1075-2/6
2SC5277A
5
3
Cob -- VCB
f=1MHz
5
Cre -- VCB
f=1MHz
Reverse Transfer Capacitance, Cre -- pF
2
3
5
7 1.0
2
3
5
7 10
2
3
5
3
2
Output Capacitance, Cre -- pF
2
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7
5
7 0.1
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
Collector-to-Base Voltage, VCB -- V
12
ITR08215
12
Collector-to-Base Voltage, VCB -- V
ITR08216
NF -- IC
f=1.5GHz
NF -- IC
VCE=2V
f=1GHz
10
10
Noise Figure, NF -- dB
Noise Figure, NF -- dB
8
8
6
6
1V
4
4
2
V
CE =
5V
2
0
0.1
2
3
5
7 1.0
2
3
5 7 10
2
3
5
0
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
5
16
Collector Current, IC -- mA
⏐
S21e
⏐
2
-- I
ITR08217
16
C
Collector Current, IC -- mA
S21e
⏐
2
-- I
ITR08218
⏐
C
f=1.5GHz
f=1GHz
=5V
VCE
Forward Transfer Gain,⏐
S21e
⏐
2
-- dB
14
12
Forward Transfer Gain,⏐
S21e
⏐
2
-- dB
14
12
10
8
6
4
2
0
2V
1V
=5V
V CE
10
8
6
4
2
0
3
5
7 1.0
2
3
5
7
10
Collector Current, IC -- mA
120
PC -- Ta
2V
1V
2
3
7 100
ITR08219
5
3
5
7 1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5 7 100
ITR08220
Collector Dissipation, PC -- mW
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR08221
No. A1075-3/6