EEWORLDEEWORLDEEWORLD

Part Number

Search

2SK3819(SMP-FD)

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size39KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SK3819(SMP-FD) Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

2SK3819(SMP-FD) Parametric

Parameter NameAttribute value
Objectid106158734
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)14 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)40 W
surface mountYES
Ordering number : ENN8057
2SK3819
2SK3819
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
100
±20
14
56
1.65
40
150
--55 to +150
24.5
14
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note : *1 VDD=20V, L=200µH, IAV=14A
*2 L≤200µH, single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=
±16V,
VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
ID=7A, VGS=4V
Ratings
min
100
1
±10
1.2
6.5
11
100
120
130
160
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : K3819
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61005QA MS IM TB-00000602 No.8057-1/4

2SK3819(SMP-FD) Related Products

2SK3819(SMP-FD) 2SK3819-TL 2SK3819(SMP)
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMP-FD, 3 PIN Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Objectid 106158734 2064451661 106158733
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration Single SINGLE WITH BUILT-IN DIODE Single
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES YES NO
Maximum drain current (Abs) (ID) 14 A - 14 A
Maximum operating temperature 150 °C - 150 °C
Maximum power dissipation(Abs) 40 W - 40 W
Why does 8086 use time-division multiplexing? What are the benefits of this?
Why does 8086 use time-division multiplexing? What are the benefits of this?...
killer302vs Embedded System
C language statement analysis
TI_UART_transmit_callback(&UCA0TXBUF); Then define as follows: void (*TI_UART_transmit_callback)(unsigned char volatile *send_next); How to interpret the grammatical structure of this sentence? What i...
火火山 51mcu
Received the board and posted the [Qinheng RISC-V core CH582] development board
I received the board and I'll show it off first. I thought it was an LQFP package, but it turned out not to be. It was too hard to solder it myself, so I was a little disappointed. The board was solde...
kangkls Domestic Chip Exchange
Newbie, please help, why can't the simulation be done?
This is an octal counter, the code is as follows:module counter_8 (clock,clear,q);input clock, clear;output[2:0] q;reg[2:0] q;always @(posedge clock or negedge clear)begin if(!clear)q=0; elseq = q +1;...
超自然 FPGA/CPLD
Who will be the low-power MCU king in 2012? [Repost]
Low power consumption, what is it all about?   Low power consumption has always been a battleground for major chip manufacturers. Since March this year, many products based on M0 and M3 cores have sud...
sunyzz MCU
Strange problem of reading and writing IIC devices under WINCE
I wrote an IIC stream interface driver to read and write EEPROM 24C02 (U1) and another IIC interface device (U2). The A0A1A2 addresses of these two devices are different, and they use round-robin meth...
sunylqh Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1002  596  606  889  2543  21  13  18  52  44 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号