DATA SHEET
NPN SILICON RF TRANSISTOR
2SC4227
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN SUPER MINIMOLD
DESCRIPTION
The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
package.
FEATURES
• Low noise : NF = 1.4 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
• High gain :
S
21e
2
= 12 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
• 3-pin super minimold package
ORDERING INFORMATION
Part Number
2SC4227
2SC4227-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
10
1.5
65
150
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10451EJ01V0DS (1st edition)
(Previous No. P10371EJ2V0DS00)
Date Published December 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1993, 2003
2SC4227
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 7 mA
−
−
40
−
−
−
0.8
0.8
240
µ
A
µ
A
−
V
CE
= 3 V, I
C
= 7 mA
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
4.5
10
−
−
7.0
12
1.4
0.45
–
−
2.7
0.9
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
R33
R33
40 to 90
R34
R34
70 to 150
R35
R35
110 to 240
2
Data Sheet PU10451EJ01V0DS
2SC4227
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5
f = 1 MHz
2
1
0.5
250
Total Power Dissipation P
tot
(mW)
Free Air
200
150
100
50
0.2
0.1
0
25
50
75
100
125
150
1
2
5
10
20
50
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
V
CE
= 3 V
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
A
160
µ
140
µ
A
120
µ
A
100
µ
A
80
µ
A
15
10
10
5
60
µ
A
40
µ
A
I
B
= 20
µ
A
0.5
Collector to Emitter Voltage V
CE
(V)
1
0
0.5
Base to Emitter Voltage V
BE
(V)
1
0
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
V
CE
= 3 V
f = 1 GHz
8
V
CE
= 3 V
100
DC Current Gain h
FE
6
50
4
20
2
0
0.5
10
0.5
1
5
10
50
1
5
10
50
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10451EJ01V0DS
3
2SC4227
INSERTION POWER GAIN
vs. FREQUENCY
25
15
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 3 V
f = 1 GHz
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 3 V
I
C
= 7 mA
20
10
15
10
5
5
0
0.1
0.2
0.5
1
2
5
0
0.5
1
5
10
50
Frequency f (GHz)
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
5
V
CE
= 3 V
f = 1 GHz
Noise Figure NF (dB)
4
3
2
1
0
0.5
1
5
10
50
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10451EJ01V0DS
京公网安备 11010802033920号
EEWORLD
