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2SC5629

Description
RF SMALL SIGNAL TRANSISTOR, SMPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size87KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SC5629 Overview

RF SMALL SIGNAL TRANSISTOR, SMPAK-3

2SC5629 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
Maximum collector current (IC)0.05 A
ConfigurationSingle
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.08 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Nominal transition frequency (fT)2000 MHz
Base Number Matches1
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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