TO
- 92
ACT108-600D
AC Thyristor power switch
Rev. 02 — 27 December 2010
Product data sheet
1. Product profile
1.1 General description
AC Thyristor power switch in a SOT54 plastic package with self-protective capabilities
against low and high energy transients
1.2 Features and benefits
Exclusive negative gate triggering
Full cycle AC conduction
High noise immunity
Remote gate separates the gate driver
from the effects of the load current
Safe clamping of low energy
over-voltage transients
Self-protective turn-on during high
energy voltage transients
Very sensitive gate for lowest gate
trigger current
1.3 Applications
Fan motor circuits
Lower-power highly inductive, resistive
and safety loads
Pump motor circuits
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
GT
Quick reference data
Parameter
repetitive peak
off-state voltage
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C; see
Figure 6
I
T(RMS)
dV
D
/dt
RMS on-state
current
rate of rise of
off-state voltage
clamping voltage
full sine wave; T
lead
≤
71 °C;
see
Figure 2
V
DM
= 402 V; T
j
= 125 °C; gate
open circuit; exponential
waveform; see
Figure 10
I
CL
= 100 µA; t
p
= 1 ms;
T
j
≤
125 °C; see
Figure 13
Conditions
Min
-
0.5
0.5
-
300
Typ
-
-
-
-
-
Max Unit
600
5
5
0.8
-
V
mA
mA
A
V/µs
V
CL
650
-
-
V
NXP Semiconductors
ACT108-600D
AC Thyristor power switch
Quick reference data
…continued
Parameter
gate trigger voltage
peak pulse voltage
on-state voltage
Conditions
V
D
= 12 V; I
T
= 100 mA;
T
j
= 25 °C
T
j
= 25 °C; non-repetitive,
off-state; see
Figure 1
I
T
= 1.1 A; see
Figure 9
Min
-
-
-
Typ
-
-
-
Max Unit
0.9
2
1.3
V
kV
V
Table 1.
Symbol
V
GT
V
PP
V
T
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
CM
G
LD
common
gate
load
G
CM
001aaj924
Simplified outline
Graphic symbol
LD
321
SOT54 (TO-92)
3. Ordering information
Table 3.
Ordering information
Package
Name
ACT108-600D
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
ACT108-600D
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 27 December 2010
2 of 14
NXP Semiconductors
ACT108-600D
AC Thyristor power switch
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
full sine wave; T
lead
≤
71 °C; see
Figure 2
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 3;
see
Figure 4
I
2
t
dI
T
/dt
I
GM
V
GM
P
G(AV)
T
stg
T
j
V
PP
I2t for fusing
rate of rise of on-state current
peak gate current
peak gate voltage
average gate power
storage temperature
junction temperature
peak pulse voltage
T
j
= 25 °C; non-repetitive, off-state;
see
Figure 1
t
p
= 10 ms; sine-wave pulse
I
T
= 1 A; I
G
= 10 mA; dI
G
/dt = 0.2 A/µs
t = 20
μs
positive applied gate voltage
over any 20 ms period
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
-
Max
600
0.8
8.8
8
0.32
50
1
15
0.1
150
125
2
Unit
V
A
A
A
A
2
s
A/µs
A
V
W
°C
°C
kV
In accordance with the Absolute Maximum Rating System (IEC 60134).
IEC 61000-4-5 Standards
Surge Generator
Open Circuit Voltage
1.2
μs/50 μs
waveform
RGen
2
Ω
R
150
Ω
L
5
μH
RG
220
Ω
Surge pulse
Load Model
DUT
003aad077
Fig 1.
Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
ACT108-600D
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 27 December 2010
3 of 14
NXP Semiconductors
ACT108-600D
AC Thyristor power switch
1.0
P
tot
(W)
0.8
α
α
003aac803
α
= 180°
0.6
0.4
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I
T(RMS)
(A)
0.8
α
= conduction angle
Fig 2.
10
I
TSM
(A)
8
Total power dissipation as a function of RMS on-state current; maximum values
003aac804
6
4
I
T
I
TSM
t
1/f
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles
10
3
2
f = 50 Hz
Fig 3.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
ACT108-600D
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 27 December 2010
4 of 14
NXP Semiconductors
ACT108-600D
AC Thyristor power switch
10
3
I
TSM
(A)
I
T
003aac805
I
TSM
t
10
2
t
p
T
j(init)
= 25
°C
max
10
1
10
−5
10
−4
10
−3
t
p
(s)
10
−2
t
p
≤
20 ms
Fig 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
ACT108-600D
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 27 December 2010
5 of 14
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