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2SB817

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size159KB,4 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB817 Overview

Transistor

2SB817 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB817
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SD1047
APPLICATIONS
・140V/12A
AF 60W output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
固电
导½
PARAMETER
CONDITIONS
Open emitter
Open base
Collector-base voltage
Collector-emitter voltage
HA
INC
Emitter-base voltage
Junction temperature
Storage temperature
ES
NG
Open collector
MIC
E
DUC
ON
VALUE
-160
OR
T
UNIT
V
V
V
A
A
W
-140
-6
-12
-15
Collector current (DC)
Collector current-peak
Collector power dissipation
T
C
=25℃
100
150
-40~150

2SB817 Related Products

2SB817 2SB817E 2SB817D
Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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