2SD789
Silicon NPN Epitaxial
ADE-208-1140A (Z)
2nd. Edition
Mar. 2001
Application
•
Low frequency power amplifier
•
Complementary pair with 2SB740
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SD789
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
100
50
6
1
0.9
150
–55 to +150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
100
50
6
—
—
100
—
—
—
E
400 to 800
Typ
—
—
—
—
—
—
—
100
20
Max
—
—
—
1
0.2
800
0.3
—
—
V
MHz
pF
Unit
V
V
V
µA
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 80 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 2 V, I
C
= 0.1A
I
C
= 1 A, I
B
= 0.1 A
V
CE
= 2 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
B
100 to 200
C
160 to 320
D
250 to 500
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
f
T
Cob
1. The 2SD789 is grouped by h
FE
as follows.
2
2SD789
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(W)
1.2
Collector Current I
C
(mA)
Typical Output Characteristics
100
0.35
0.3
80
0.25
60
0.8
0.2
0.15
40
0.4
0.1
20
0.05 mA
I
B
= 0
0
50
100
Ambient Temperature Ta (°C)
150
0
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
2.0
Typical Transfer Characteristics
1,000
300
100
30
10
3
1
0
0.2
0.4
0.6
0.8
Base to Emitter Voltage V
BE
(V)
1.0
40
Collector Current I
C
(mA)
Collector Current I
C
(A)
1.6
35
30
25
20
15
10
5 mA
P
C
=
0.9
W
V
CE
= 2 V
1.2
0.8
0.4
I
B
= 0
0
0.4
0.8
1.2
1.6
2.0
Collector to Emitter Voltage V
CE
(V)
3
2SD789
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
DC Current Transfer Ratio vs.
Collector Current
10,000
DC Current Transfer Ratio h
FE
3,000
1,000
300
100
30
10
1
3
10
30
100 300
Collector Current I
C
(mA)
1,000
Pulse
V
CE
= 2 V
Saturation Voltage vs. Collector Current
Base to Emitter Saturation Voltage V
BE(sat)
(V)
1.0
V
BE(sat)
0.3
0.1
0.03
V
CE(sat)
Pulse
I
C
= 10 I
B
0.01
10
30
100
300
Collector Current I
C
(mA)
1,000
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
300
100
30
10
3
1.0
0.3
0.3
f = 1 MHz
I
E
= 0
1.0
3
10
30
100 300
Collector to Base Voltage V
CB
(V)
4
2SD789
Package Dimensions
As of January, 2001
Unit: mm
4.8
±
0.4
3.8
±
0.4
0.65
±
0.1
0.75 Max
0.55Max
0.7
0.60 Max
2.3 Max
10.1 Min
8.0
±
0.5
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 Mod
—
Conforms
0.35 g
5
京公网安备 11010802033920号
EEWORLD
