Ordering number:ENN1049E
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1253/2SC3135
High-h
FE
, AF Amp Applications
Features
· High V
EBO
.
· Wide ASO and high durability against breakdown.
Package Dimensions
unit:mm
2033A
[2SA1253/2SC3135]
4.0
3.0
2.2
0.4
0.5
0.6
1.8
15.0
0.4
0.4
1 2
1.3
0.7
3
1.3
0.7
( ) : 2SA1253
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
3.0
3.8
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Ratings
(–)60
(–)50
(–)15
(–)200
(–)400
250
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Common Base Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)10V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
VCB=(–)6V, f=1MHz
100*
100
(3.8)
2.5
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
560*
MHz
pF
Unit
µA
µA
* : The 2SA1253/2SC3135 are classified by 1mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
U
280 to 560
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73102TN (KT)/71598HA (KT)/3097KI/3135KI/D282KI (KOTO) No.1049-1/4
2SA1253/2SC3135
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
VCE(sat)
Conditions
IC=(–)50mA, IB=(–)5mA
(–)60
(–)50
(–)15
Ratings
min
typ
(–0.2)
0.15
max
(–)0.5
Unit
V
V
V
V
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
IE=(–)10µA, IC=0
--
50
IC -- VCE
2SA1253
From top
--500µA
--450µA
--400µA
--350µA
--300µA
A
--250
µ
50
IC -- VCE
2SC3135
From top
500µA
450µA
400µA
350µA
300µA
A
250
µ
A
200
µ
Collector Current, IC – mA
Collector Current, IC – mA
--
40
--200
µ
A
--150µA
40
150
µ
A
--
30
30
--100µA
--
20
100
µ
A
20
--50µA
--
10
50µA
10
0
0
IB=0
--
0.2
--
0.4
--
0.6
--
0.8
Collector-to-Emitter Voltage, VCE – V
--
1.0
ITR03091
0
0
IB=0
0.2
0.4
0.6
0.8
1.0
ITR03092
Collector-to-Emitter Voltage, VCE – V
20
--
20
IC -- VCE
µ
A
70
A
--
0
µ
--6
A
0
µ
--5
A
0
µ
--4
µ
A
--30
IC -- VCE
70
µ
A
2SC3135
2SA1253
Collector Current, IC – mA
Collector Current, IC – mA
--
16
16
60
µ
A
50
µ
A
--
12
12
40
µ
A
30µA
--
8
A
--20
µ
--10
µ
A
8
20
µA
4
--
4
10µA
0
0
IB=0
--
10
--
20
--
30
--
40
Collector-to-Emitter Voltage, VCE – V
--
50
ITR03093
0
0
IB=0
10
20
30
40
50
ITR03094
Collector-to-Emitter Voltage, VCE – V
100
--
100
IC -- VBE
2SA1253
VCE=--6V
Pulse
IC -- VBE
2SC3135
VCE=6V
Pulse
Collector Current, IC – mA
--
60
Collector Current, IC – mA
--
0.4
--
0.8
--
1.2
Base-to-Emitter Voltage, VBE – V
--
1.6
ITR03095
--
80
80
60
--
40
40
--
20
20
0
0
0
0
0.4
0.8
1.2
1.6
ITR03096
Base-to-Emitter Voltage, VBE – V
No.1049-2/4
2SA1253/2SC3135
1000
hFE -- IC
2SA1253
VCE=--6V
Pulse
1000
hFE -- IC
2SC3135
VCE=6V
Pulse
Common Enitter DC Current Gain, hFE
5
3
2
Common Enitter DC Current Gain, hFE
7
7
5
3
2
100
7
5
3
100
7
5
3
2
0.1
2
5
2
5
2
5
2
100
ITR03098
--
0.1
1000
2
2
5
5
--
1.0 2
--
10 2
Collector Current, IC – mA
5
--
100
2
1.0
10
ITR03097
1000
Collector Current, IC – mA
fT -- IC
2SA1253
VCE=--6V
Pulse
fT -- IC
2SC3135
VCE=6V
Pulse
Gain-Bandwidth Product, fT – MHz
Gain-Bandwidth Product, fT – MHz
7
5
3
2
7
5
3
2
100
7
5
3
2
100
7
5
3
2
10
7
--
1.0
2
2
3
5
--
10
Collector Current, IC – mA
3
5
7
7
--
100
2
10
7
1.0
2
3
5
7
10
2
3
5
ITR03099
Collector Current, IC – mA
Common Base Output Capacitance, Cob – pF
3
2
7 100
2
ITR03100
Common Base Output Capacitance, Cob – pF
3
2
Cob -- VCB
2SA1253
f=1MHz
Cob -- VCB
2SC3135
f=1MHz
10
7
5
10
7
5
3
2
3
2
1.0
5
7
2
3
5 7
--
10
2
3
--
1.0
Collector-to-Base Voltage, VCB -- V
5
7
--
100
1.0
5
7
1.0
2
3
5
7
ITR03101
3
Collector-to-Base Voltage, VCB -- V
10
2
3
7 100
ITR03102
5
3
2
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2SA1253
IC / IB=10
VCE(sat) -- IC
2SC3135
IC / IB=10
2
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
--
1.0
7
5
3
2
1.0
7
5
3
2
--
0.1
7
5
3
2
3
2
3
5
--
10
Collector Current, IC – mA
5
7
7
2
0.1
7
5
3
1.0
--
1.0
--
100
2
3
5
7
10
2
3
5
7
ITR03103
Collector Current, IC – mA
2
100
ITR03104
No.1049-3/4
2SA1253/2SC3135
7
5
3
ASO
ICP=400mA
IC=200mA
2SA1253 / 2SC3135
350
PC -- Ta
2SA1253 / 2SC3135
300
2
10
DC
op
Collector Dissipation, P
C
– mW
Collector Current, IC – mA
100
7
5
3
2
10
7
5
3
2
0m
m
10
s
s
250
era
t
200
ion
150
100
50
For PNP, minus sign is omitted.
5
7 1.0
2
3
5
7
Collector-to-Emitter Voltage, VCE – V
10
2
3
5
7 100
ITR03105
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR03106
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
PS No.1049-4/4
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