Ordering number : ENA0324
2SK4065
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4065
Features
•
•
•
General-Purpose Switching Device
Applications
Ultralow ON-resistance.
Load switching applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
75
±20
100
400
1.65
90
150
--55 to +150
735
70
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note :
*1
VDD=30V, L=200µH, IAV=70A
*2
L≤200µH, Single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0V
VDS=75V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=50A, VGS=4V
Ratings
min
75
1
±10
1.2
47
78
4.6
5.7
6.0
8.0
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : K4065
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 / 41006QA MS IM TB-00002239 No. A0324-1/5
2SK4065
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=35V, VGS=10V, ID=100A
VDS=35V, VGS=10V, ID=100A
VDS=35V, VGS=10V, ID=100A
IS=100A, VGS=0V
Ratings
min
typ
12200
950
730
80
460
930
640
220
40
50
0.9
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
7513-002
10.2
4.5
Package Dimensions
unit : mm
7001-003
10.2
4.5
1.3
0.2
11.5
8.8
9.9
0.2
1.3
1.5MAX
1.6
8.8
20.9
1.2
3.0
1
0.8
2
3
1.2
0 to 0.3
0.4
(9.4)
11.0
0.8
0.4
2.55
2.55
1
2
3
1 : Gate
2 : Drain
3 : Source
2.55
2.7
1.35
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
2.7
2.55
2.55
2.55
SANYO : SMP
Switching Time Test Circuit
VIN
10V
0V
VIN
ID=50A
RL=0.7Ω
VDD=35V
Avalanche Resistance Test Circuit
L
≥50Ω
D
PW=10µs
D.C.≤1%
VOUT
2SK4065
10V
0V
1.4
G
50Ω
VDD
2SK4065
P.G
50Ω
S
No. A0324-2/5
2SK4065
200
180
160
ID -- VDS
V
8V
Tc=
--2
5
°
C
75
°
C
5
°
C
1.5
2.0
2.5
3.0
10
6V
180
160
Drain Current, ID -- A
Drain Current, ID -- A
140
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
140
120
100
80
60
40
20
0
0
0.5
1.0
3.5
4.0
4.5
VGS=3V
Drain-to-Source Voltage, VDS -- V
30
IT10698
14
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
25
°
--25
°
C
C
Tc=
7
IT10699
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=50A
Single pulse
Single pulse
12
25
10
20
8
15
6
50
I D=
A,
4V
S=
VG
10
5
Tc=75°C
25°C
4
50
I D=
A
=10
GS
,V
V
2
0
--50
--25°C
0
0
1
2
3
4
5
6
7
8
9
10
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
2
y
fs -- ID
IT10700
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
Case Temperature, Tc --
°
C
IT10701
IS -- VSD
VGS=0V
Single pulse
Forward Transfer Admittance,
y
fs -- S
100
7
5
3
2
VDS=10V
Single pulse
°
C
25
Tc
10
7
5
3
2
1.0
0.1
5
°
--2
=
C
75
°
C
Source Current, IS -- A
°
C
0.1
7
5
3
2
0.01
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
3
2
5 7 100
IT10702
3
0
0.2
Tc=7
5
0.4
0.6
--25
°
C
25
°
C
0.8
1.0
1.2
25
°
C
1.4
IT10703
30
IT10756
Tc=25°C
Single pulse
200
ID -- VGS
VDS=10V
Single pulse
Diode Forward Voltage, VSD -- V
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
VDD=35V
VGS=10V
Ciss, Coss, Crss -- pF
2
Switching Time, SW Time -- ns
10k
7
5
3
2
1000
7
5
3
2
tf
Coss
1k
7
5
3
tr
100
7
5
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT10704
td(on)
Crss
0
5
10
15
20
25
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No. A0324-3/5
2SK4065
10
9
VGS -- Qg
VDS=35V
ID=100A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
50
100
150
200
250
IT10705
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=400A
ID=100A
10
1ms
1
ms
DC
00m
op
s
era
tio
n
≤10µs
10
10
0
µ
s
µ
s
Operation in
this area is
limited by RDS(on).
0.1
0.1
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
2.0
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS --
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
5 7 100
2
IT10881
V
PD -- Tc
Allowable Power Dissipation, PD -- W
1.65
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
140
160
Ambient Temperature, Ta --
°C
120
IT10707
Case Temperature, Tc --
°C
IT10708
EAS -- Ta
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10709
Ambient Temperature, Ta --
°C
No. A0324-4/5
2SK4065
Note on usage : Since the 2SK4065 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0324-5/5
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