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2SK4066(SMP-FD)

Description
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,100A I(D),TO-263ABVAR
CategoryDiscrete semiconductor    The transistor   
File Size40KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2SK4066(SMP-FD) Overview

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,100A I(D),TO-263ABVAR

2SK4066(SMP-FD) Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)100 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)90 W
surface mountYES
Base Number Matches1
Ordering number : ENA0225A
2SK4066
N-Channel Silicon MOSFET
2SK4066
Features
General-Purpose Switching Device
Applications
Low ON-resistance.
Load switching applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
60
±20
100
400
1.65
90
150
--55 to +150
850
70
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note :
*1
VDD=30V, L=200µH, IAV=70A
*2
L≤200µH, Single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=
±16V,
VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=50A, VGS=4V
Ratings
min
60
1
±10
1.2
51
85
3.6
4.7
4.7
6.6
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : K4066
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41006 MS IM TB-00002121 / 12506QA MS IM TB-00002052 No. A0225-1/5

2SK4066(SMP-FD) Related Products

2SK4066(SMP-FD) 2SK4066(SMP)
Description TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,100A I(D),TO-263ABVAR TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,100A I(D),TO-262VAR
Reach Compliance Code compli compli
Configuration Single Single
Maximum drain current (Abs) (ID) 100 A 100 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 90 W 90 W
surface mount YES NO
Base Number Matches 1 1
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