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2SD1950-AZ

Description
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
CategoryDiscrete semiconductor    The transistor   
File Size2MB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

2SD1950-AZ Overview

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

2SD1950-AZ Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codePOMM
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Manufacturer packaging codePLZZ0004CC-A3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JESD-30 codeR-PSSO-F3
JESD-609 codee6
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn98Bi2)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)350 MHz
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

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