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DPDD32MX16WSCY5-DP-XX1025

Description
DDR DRAM Module, 32MX16, CMOS, LEADED STACK, TSOP-66
Categorystorage    storage   
File Size185KB,2 Pages
ManufacturerB&B Electronics Manufacturing Company
Download Datasheet Parametric View All

DPDD32MX16WSCY5-DP-XX1025 Overview

DDR DRAM Module, 32MX16, CMOS, LEADED STACK, TSOP-66

DPDD32MX16WSCY5-DP-XX1025 Parametric

Parameter NameAttribute value
MakerB&B Electronics Manufacturing Company
Parts packaging codeDMA
package instruction,
Contacts66
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-G66
memory density536870912 bit
Memory IC TypeDDR DRAM MODULE
memory width16
Number of functions1
Number of ports1
Number of terminals66
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
organize32MX16
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
self refreshYES
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Terminal formGULL WING
Terminal locationDUAL
ADVANCE D COM P ON E NTS PACKAG I NG
512 Megabit CMOS DDR SDRAM
DPDD32MX16WSCY5
DESCRIPTION:
The Memory Stack™ series is a family of interchangeable memory modules. The 512 Megabit Double Data Rate Synchronous
DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices
are constructed with two 16 Meg x 16 DDR SDRAMs.
This 256 Megabit based LP-Stack™ module DPDD32MX16WSCY5, has been designed to fit in the same footprint as the 16
Meg x 16 DDR SDRAM TSOP monolithic. This allows system upgrade without electrical or mechanical redesign, providing an
immediate and low cost memory upgrade solution.
PIN-OUT DIAGRAM
FEATURES:
• Configuration:
VDD
1
66 VSS
32M x 16 (2 Banks of 4 Meg x 16 bits x 4 banks)
DQ0
2
65 DQ15
• JEDEC Approved Footprint and Pinout
VDDQ
3
64 VSSQ
DQ1
4
63 DQ14
• IPC-A-610 Manufacturing Standards
DQ2
5
62 DQ13
VSSQ
6
61 VDDQ
• Package: 66-Pin Leaded TSOP Stack
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The following features are not affected by LP-Stack and are
provided as reference only. Refer to memory OEM device
specification for details.
• Clock Frequency is determined by OEM memory
device used.
• 2.5 Volt DQ Supply
• JEDEC Standard SSTL_2 Interface for all
Inputs/Outputs
• Four Bank Operation
• Programmable Burst Type:
Burst Length and Read Latency
• Refresh: Refer to memory OEM specifications
• Auto and Self Refresh
PIN NAMES
A0-A12
BA0,BA1
A10/AP
DQ0-DQ15
CAS
CS0, CS1
RAS
WE
CK, CK
CKE0, CKE1
UDQS, LDQS
UDM, LDM
QFC
V
DD
Vss
V
DDQ
Vss
Q
V
REF
N.C.
NU
30A246-00
REV. D 6/02
Row Address: A0 - A12
Column Address: A0 - A9
Bank Select Address
Auto Precharge
Data In/Data Out
Column Address Strobe
Chip Selects
Row Address Strobe
Data Write Enable
Differential Clock Inputs
Clock Enables
Data Strobe
Data Mask
DQ FET Switch Control
Power Supply (+2.5V)
Ground
DQ Power Supply (+2.5V)
DQ Ground
Reference Voltage for inputs
No Connect
Not Used, Electrical Connect is Present
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
N.C.
VDDQ
LDQS
N.C.
VDD
*NU/QFC
LDM
WE
CAS
RAS
CS0
CS1
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
(TOP VIEW)
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
N.C.
VSSQ
UDQS
N.C.
VREF
VSS
UDM
CK
CK
CKE0
CKE1
A12
A11
A9
A8
A7
A6
A5
A4
VSS
* This pin is a No Connect for some Manufacturers.
FUNCTIONAL BLOCK DIAGRAM
CS1
CKE1
CS0
CKE0
RAS
CAS
WE
CK
CK
QFC
VREF
UDQS/LDQS
UDM/LDM
A0-A12
BA0-BA1
(4 Meg x 16 Bits x 4 Banks)
256 Mb DDR SDRAM
(4 Meg x 16 Bits x 4 Banks)
DQ0-DQ15
This document contains information on a product that is currently released to production at DPAC Technologies Corp.
DPAC reserves the right to change products or specifications herein without prior notice.
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