BGU7062
Analog high linearity low noise variable gain amplifier
Rev. 1 — 10 August 2012
Preliminary data sheet
1. Product profile
1.1 General description
The BGU7062 is a fully integrated analog-controlled variable gain amplifier module. Its
low noise and high linearity performance makes it ideal for sensitive receivers in cellular
base station applications. The BGU7062 is operating in the 1710 MHz to 1785 MHz
frequency range and has a gain control range of 35 dB. At maximum gain the noise figure
is 0.85 dB. The gain is analog-controlled having maximum gain at 0 V and minimum gain
at 3.3 V. The LNA can be bypassed extending the dynamic range. The BGU7062 is
internally matched to 50 ohm, meaning no external matching is required, enabling ease of
use. It is housed in a 16 pins 8 mm
8 mm
1.3 mm leadless HLQFN16R package
SOT1301.
1.2 Features and benefits
Input and output internally matched to 50
Low noise figure of 0.85 dB
High input IP3 of 0.8 dBm
High P
i(1dB)
of
12.8
dBm
Bypass mode of LNA giving high dynamic gain range
Gain control range of 0 dB to 35 dB
Single 5 V supply
Single analog gain control of 0 V to 3.3 V
Unconditionally stable up to 12.75 GHz
Moisture sensitivity level 3
ESD protection at all pins
1.3 Applications
Cellular base stations, remote radio heads
3G, LTE infrastructure
Low noise applications with variable gain and high linearity requirements
Active antenna
NXP Semiconductors
BGU7062
Analog high linearity low noise variable gain amplifier
1.4 Quick reference data
Table 1.
Quick reference data
V
CC1
= 5 V; V
CC2
= 5 V; f = 1750 MHz; T
amb
= 25
C; input and output 50
; unless otherwise specified.
Symbol Parameter
I
CC(tot)
NF
IP3
I
P
i(1dB)
[1]
[2]
Conditions
high gain mode
low gain mode
V
ctrl(Gp)
= 0 V (maximum power gain)
G
p
= 35 dB
G
p
= 35 dB; 2-tone; tone-spacing = 1.0 MHz
[1]
[2]
[1]
[1]
[1]
[1]
Min Typ
190 220
165 190
-
-
0
0.85
0.95
0.8
Max Unit
250
215
-
1.1
-
mA
mA
dB
dB
dBm
dBm
total supply current
noise figure
input third-order intercept point
input power at 1 dB gain compression G
p
= 35 dB
14 12.8
-
high gain mode: GS1 = LOW; GS2 = HIGH (see
Table 9)
low gain mode: GS1 = HIGH; GS2 = LOW (see
Table 9)
2. Pinning information
2.1 Pinning
9
&&
9
&&
*1'
*1'
5)B,1
*1'
WHUPLQDO
LQGH[ DUHD
5)B287
*1'
*6
QF
QF
9
*1'
*1'
QF
*6
DDD
7UDQVSDUHQW WRS YLHZ
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Symbol
RF_IN
GND
GS1
n.c.
GS2
BGU7062
Pin description
Pin
1
2, 7, 8, 11, 13, 16
3
4, 5, 10
6
All information provided in this document is subject to legal disclaimers.
Description
RF input
ground
gain switch control 1
not connected
gain switch control 2
© NXP B.V. 2012. All rights reserved.
Preliminary data sheet
Rev. 1 — 10 August 2012
2 of 16
NXP Semiconductors
BGU7062
Analog high linearity low noise variable gain amplifier
Pin description
…continued
Pin
9
12
14
15
Description
power gain control voltage
RF output
supply voltage 2
supply voltage 1
Table 2.
Symbol
V
ctrl(Gp)
RF_OUT
V
CC2
V
CC1
3. Ordering information
Table 3.
Ordering information
Package
Name
BGU7062
HLQFN16R
Description
plastic thermal enhanced low quad flat package;
no leads; 16 terminals; body 8
8
1.3 mm
Version
SOT1301-1
Type number
4. Functional diagram
9
&&
9
&&
*1'
*1'
WHUPLQDO
LQGH[ DUHD
5)B,1
%<3$66 3$7+
5)B287
*1'
/1$
9*$
*1'
*6
QF
QF
9
*1'
*1'
QF
*6
DDD
Fig 2.
Functional diagram
BGU7062
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Preliminary data sheet
Rev. 1 — 10 August 2012
3 of 16
NXP Semiconductors
BGU7062
Analog high linearity low noise variable gain amplifier
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
CC
V
ctrl(Gp)
V
I(GS1)
V
I(GS2)
supply voltage
power gain control voltage
input voltage on pin GS1
input voltage on pin GS2
high gain mode; V
ctrl(Gp)
= 0 V
low gain mode; V
ctrl(Gp)
= 0 V
T
j
T
stg
V
ESD
junction temperature
storage temperature
electrostatic discharge voltage
Human Body Model (HBM); according to
ANSI/ESDA-JEDEC JS-001-2020-Device Testing,
Human Body Model
Charged Device Model (CDM); according to
JEDEC standard 22-C101
[1]
[2]
high gain mode: GS1 = LOW; GS2 = HIGH (see
Table 9)
low gain mode: GS1 = HIGH; GS2 = LOW (see
Table 9)
[1]
[2]
Conditions
Min Max
0
1
1
1
-
-
-
-
6
+3.6
+3.6
+3.6
10
15
150
2
Unit
V
V
V
V
dBm
dBm
C
kV
P
i(RF)CW
continuous waveform RF input power
40
+150
C
-
750
V
6. Recommended operating conditions
Table 5.
Symbol
V
CC1
V
CC2
V
ctrl(Gp)
V
I(GS1)
V
I(GS2)
Z
0
T
case
Recommended operating conditions
Parameter
supply voltage 1
supply voltage 2
power gain control voltage
input voltage on pin GS1
input voltage on pin GS2
characteristic impedance
case temperature
Conditions
Min
4.75
4.75
0
0
0
-
40
Typ
5
5
-
-
-
50
-
Max
5.25
5.25
3.3
3.3
3.3
-
+85
Unit
V
V
V
V
V
C
7. Thermal characteristics
Table 6.
Symbol
R
th(j-case)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
[1]
Typ
42
Unit
K/W
The case temperature is measured at the ground solder pad.
BGU7062
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Preliminary data sheet
Rev. 1 — 10 August 2012
4 of 16
NXP Semiconductors
BGU7062
Analog high linearity low noise variable gain amplifier
8. Characteristics
Table 7.
Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see
Table 9);
V
CC1
= 5 V; V
CC2
= 5 V; f = 1750 MHz; T
amb
= 25
C; input and output 50
;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
I
CC(tot)
G
p(min)
G
p(max)
G
p(flat)
NF
total supply current
minimum power gain
maximum power gain
power gain flatness
noise figure
V
ctrl(Gp)
= 3.3 V
V
ctrl(Gp)
= 0 V
1710 MHz
f
1785 MHz; 18 dB
G
p
35 dB
V
ctrl(Gp)
= 0 V (maximum power gain)
G
p
= 35 dB
G
p
= 18 dB
IP3
I
input third-order intercept point
2-tone; tone-spacing = 1.0 MHz
G
p
= 35 dB
G
p
= 30 dB
G
p
= 29 dB
G
p
= 18 dB
P
i(1dB)
input power at 1 dB gain compression G
p
= 35 dB
G
p
= 30 dB
G
p
= 29 dB
G
p
= 18 dB
RL
in
RL
out
K
input return loss
output return loss
Rollett stability factor
V
ctrl(Gp)
= 0 V (maximum power gain)
G
p
= 35 dB
V
ctrl(Gp)
= 0 V (maximum power gain)
0 GHz
f
12.75 GHz
0
-
-
-
-
-
-
-
-
-
1
0.8
3.2
3.5
5.0
7.5
7.0
5.9
30
25
17
-
-
-
-
-
-
-
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
Conditions
Min Typ
190 220
-
-
-
-
-
-
13.5
37
0.3
0.85
0.95
5.80
Max Unit
250 mA
-
-
-
-
1.1
-
dB
dB
dB
dB
dB
dB
14 12.8
-
Table 8.
Characteristics low gain mode
GS1 = HIGH; GS2 = LOW (see
Table 9);
V
CC1
= 5 V; V
CC2
= 5 V; f = 1750 MHz; T
amb
= 25
C; input and output 50
;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
I
CC(tot)
G
p(min)
G
p(max)
G
p(flat)
NF
IP3
I
total supply current
minimum power gain
maximum power gain
power gain flatness
noise figure
input third-order intercept point
V
ctrl(Gp)
= 3.3 V
V
ctrl(Gp)
= 0 V
1710 MHz
f
1785 MHz; 3 dB
G
p
17 dB
G
p
= 17 dB
G
p
= 3 dB
2-tone; tone-spacing = 1.0 MHz
G
p
= 17 dB
G
p
= 12 dB
G
p
= 11 dB
G
p
= 3 dB
-
-
-
-
20
24
25
28
Conditions
Min Typ
165 190
-
-
-
-
-
Max Unit
215
mA
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
6.6
-
18.6 -
0.1
9.8
-
-
-
-
-
-
-
20.6 -
BGU7062
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Preliminary data sheet
Rev. 1 — 10 August 2012
5 of 16
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