BLF8G10LS-160V
Power LDMOS transistor
Rev. 2 — 24 October 2012
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 925 MHz to 960 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
925 to 960
I
Dq
(mA)
1100
V
DS
(V)
30
P
L(AV)
(W)
35
G
p
(dB)
19.9
D
(%)
30
ACPR
(dBc)
38
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (60 MHz typical)
Designed for broadband operation (925 MHz to 960 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
925 MHz to 960 MHz frequency range
NXP Semiconductors
BLF8G10LS-160V
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
[1]
Pinning
Description
drain
gate
source
decoupling lead
decoupling lead
n.c.
n.c.
[1]
Simplified outline
Graphic symbol
DDD
Connected to flange
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G10LS-160V
-
earless flanged ceramic package; 6 leads
Version
SOT1244B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+13
+150
200
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 35 W;
V
DS
= 30 V; I
Dq
= 1100 mA
Typ
0.5
Unit
K/W
BLF8G10LS-160V
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 24 October 2012
2 of 11
NXP Semiconductors
BLF8G10LS-160V
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 220 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.7 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
39.0
-
14.9
85
Max
-
2.3
2.8
-
280
-
151
Unit
V
V
A
A
nA
S
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.2 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.7 A
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f
1
= 925 MHz; f
2
= 930 MHz; f
3
= 955 MHz; f
4
= 960 MHz; RF performance at
V
DS
= 30 V; I
Dq
= 1100 mA; T
case
= 25
C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
G
p
RL
in
D
ACPR
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 35 W
P
L(AV)
= 35 W
P
L(AV)
= 35 W
P
L(AV)
= 35 W
Min
18.4
-
27
-
Typ
15
30
38
Max
10
-
32.5
Unit
dB
dB
%
dBc
19.9 -
7. Test information
7.1 Ruggedness in class-AB operation
BLF8G10LS-160V is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 30 V;
I
Dq
= 1100 mA; P
L
= 160 W (CW); f = 925 MHz to 960 MHz.
7.2 Impedance information
Table 8.
Typical impedance information
I
Dq
= 1100 mA; main transistor V
DS
= 30 V.
Z
S
and Z
L
defined in
Figure 1.
f
(MHz)
925
942
960
Z
S
()
4.5
j4.1
5.9
j4.0
6.2
j4.7
Z
L
()
1.2
j2.4
1.2
j2.3
1.2
j2.5
BLF8G10LS-160V
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 24 October 2012
3 of 11
NXP Semiconductors
BLF8G10LS-160V
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 VBW in class-AB operation
The BLF8G10LS-160V shows 60 MHz (typical) video band-width in class-AB test circuit in
900 MHz band at V
DS
= 30 V and I
Dq
= 1.1 A.
7.4 Circuit
C8
C18
C4
R1
C16
C14
C10
C6
C12
C1
C3
C15
C9
C5
R2
C17
C7
C11
aaa-004169
C13
Printed-Circuit Board (PCB): Rogers RO4350;
r
= 3.5 F/m; thickness = 0.762 mm;
thickness copper plating = 35
m.
The vias can be used as a reference to place components.
The above layout shows the test circuit used to measure the devices in production. A more
appropriate application demonstration for specific customer needs can be provided.
See
Table 9
for list of components.
Fig 2.
Component layout
Table 9.
List of components
See
Figure 2
for component layout.
Component
C1, C3
C4, C5
C6, C7
C8, C9, C10, C11
C12, C13
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
Value
11 pF
36 pF
6.8 pF
10
F
470
F,
63 V
Remarks
ATC 800B
ATC 800B
ATC 800B
Murata
BLF8G10LS-160V
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 24 October 2012
4 of 11
NXP Semiconductors
BLF8G10LS-160V
Power LDMOS transistor
Table 9.
List of components
See
Figure 2
for component layout.
Component
C14, C15
C18
R1, R2
[1]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
resistor
Value
4.7
F
1
F
2.0
[1]
Remarks
Murata
Murata
Video decoupling capacitors are not used in production test circuit.
7.5 Graphical data
7.5.1 CW pulse
DDD
DDD
*
S
'
'
5/
LQ
*
S
3
/
3
/
V
DS
= 30 V; I
Dq
= 1100 mA.
(1) f = 925 MHz
(2) f = 940 MHz
(3) f = 960 MHz
V
DS
= 30 V; I
Dq
= 1100 mA.
(1) f = 925 MHz
(2) f = 940 MHz
(3) f = 960 MHz
Fig 3.
Power gain and drain efficiency as function of
output power; typical values
Fig 4.
Input return loss as a function of output
power; typical values
BLF8G10LS-160V
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 24 October 2012
5 of 11
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