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BLF6G22LS-180RN:11

Description
Power LDMOS transistor
File Size98KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF6G22LS-180RN:11 Overview

Power LDMOS transistor

BLF6G22-180RN;
BLF6G22LS-180RN
Power LDMOS transistor
Rev. 01 — 20 November 2008
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
30
P
L(AV)
(W)
40
G
p
(dB)
16.0
η
D
(%)
25
IMD3
(dBc)
−38
[1]
ACPR
(dBc)
−42
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 30 V and an I
Dq
of 1400 mA:
N
Average output power = 40 W
N
Power gain = 16.0 dB
N
Efficiency = 25 %
N
IMD3 =
−38
dBc
N
ACPR =
−42
dBc
I
Easy power control
I
Integrated ESD protection
I
Enhanced ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (2000 MHz to 2200 MHz)
I
Internally matched for ease of use

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