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2SD1101C

Description
Small Signal Bipolar Transistor, 0.7A I(C), NPN, MPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size23KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SD1101C Overview

Small Signal Bipolar Transistor, 0.7A I(C), NPN, MPAK-3

2SD1101C Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.7 A
ConfigurationSingle
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
2SD1101
Silicon NPN Epitaxial
ADE-208-1142 (Z)
1st. Edition
Mar. 2001
Application
Low frequency amplifier
Complementary pair with 2SB831
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
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