Power Transistors
2SD2266
Silicon NPN triple diffusion planar type
Unit: mm
4.2
±0.2
For power switching
I
Features
•
High-speed switching
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Allowing supply with the radial taping
10.0
±0.2
1.0
±0.2
5.0
±0.1
13.0
±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
1.2
±0.1
1.48
±0.2
2.5
±0.1
90˚
C 1.0
2.25
±0.2
18.0
±0.5
Solder Dip
I
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
CP
I
C
I
B
V
EBO
Collector to base voltage
80
60
7
8
4
1
0.65
±0.1
0.35
±0.1
0.65
±0.1
Rating
Unit
V
V
V
A
A
A
1.05
±0.1
0.55
±0.1
0.55
±0.1
2.5
±0.2
2.5
±0.2
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
T
C
= 25°C
T
a
= 25°C
Junction temperature
Storage temperature
I
Electrical Characteristics
T
C
=
25°C
Parameter
Symbol
I
CBO
I
EBO
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Pl
Note) *: Rank classification
Rank
h
FE1
Q
70 to 150
P
120 to 250
O
160 to 320
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1 2 3
1: Base
2: Collector
3: Emitter
MT-4 (MT4 Type Package)
P
C
T
j
15
2
W
150
°C
°C
T
stg
−55
to
+150
Conditions
Min
Typ
Max
100
Unit
µA
V
µA
V
CB
= 80 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
I
C
= 25 mA, I
B
= 0
100
V
CEO
h
FE2
V
BE
f
T
60
h
FE1 *
V
CE
= 4 V, I
C
= 1 A
V
CE
= 4 V, I
C
= 4 A
V
CE
= 4 V, I
C
= 4 A
I
C
= 4 A, I
B
= 0.4 A
70
20
320
2.0
V
V
CE(sat)
t
on
t
stg
t
f
1.5
V
V
CE
= 12 V, I
C
= 0.2 A, f = 10 MHz
I
C
= 4 A, I
B1
= 0.4 A, I
B2
=
−
0.4 A,
V
CC
= 50 V
80
MHz
µs
µs
µs
0.3
1.0
0.2
1
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–
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–
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