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BAS85.115

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-213AC
Categorysemiconductor    Discrete semiconductor   
File Size99KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BAS85.115 Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-213AC

BAS85.115 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, HERMETIC SEALED, 玻璃, LL-34, 2 PIN
stateACTIVE
packaging shaperound
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
terminal coatingtin
Terminal locationEND
Packaging MaterialsGlass
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A
BAS85
Schottky barrier diode
Rev. 6 — 10 September 2010
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted
Device SMD package with tin-plated metal discs at each end. It is suitable for
“automatic placement” and as such it can withstand immersion soldering.
1.2 Features and benefits
Low forward voltage
High breakdown voltage
Guard-ring protected
Hermetically sealed glass SMD package
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
V
F
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 100 mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
200
30
800
Unit
mA
V
mV

BAS85.115 Related Products

BAS85.115 BAS85
Description 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-213AC 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-213AC
Number of terminals 2 2
Number of components 1 1
surface mount Yes YES
Terminal form WRAP AROUND WRAP AROUND
Terminal location END END
Shell connection isolation ISOLATED
Diode component materials silicon SILICON
Diode type Signal diode RECTIFIER DIODE
Maximum reverse recovery time 0.0050 us 0.004 µs
Maximum repetitive peak reverse voltage 30 V 30 V
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