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IS61NLF204818A-7.5B3I

Description
ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, BGA-165
Categorystorage    storage   
File Size403KB,23 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
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IS61NLF204818A-7.5B3I Overview

ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, BGA-165

IS61NLF204818A-7.5B3I Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeBGA
package instruction13 X 15 MM, PLASTIC, BGA-165
Contacts165
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time7.5 ns
Maximum clock frequency (fCLK)117 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density37748736 bit
Memory IC TypeZBT SRAM
memory width18
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.105 A
Minimum standby current3.14 V
Maximum slew rate0.4 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
IS61NLF102436A/IS61NVF102436A
IS61NLF204818A/IS61NVF204818A
1M x 36 and 2M x 18
36Mb, FLOW THROUGH 'NO WAIT'
STATE BUS SRAM
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single Read/Write control pin
• Clock controlled, registered address,
data and control
JUNE 2008
DESCRIPTION
The 36 Meg 'NLF/NVF' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
networking and communications applications. They are
organized as 1M words by 36 bits and 2M words by 18
bits, fabricated with
ISSI
's advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable,
CKE is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the ADV
input. When the ADV is HIGH the internal burst counter
is incremented. New external addresses can be loaded
when ADV is LOW.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock inputs and when
WE
is
LOW. Separate byte enables allow individual bytes to be
written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
• Interleaved or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
CKE
pin to enable clock and suspend operation
• JEDEC 100-pin TQFP and 165-ball packages
• Power supply:
NVF: V
dd
2.5V (± 5%), V
ddq
2.5V (± 5%)
NLF: V
dd
3.3V (± 5%), V
ddq
3.3V/2.5V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
6.5
6.5
7.5
133
7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/09/08
1

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