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2SD1887C

Description
TRANSISTOR,BJT,NPN,700V V(BR)CEO,10A I(C),TO-247VAR
CategoryDiscrete semiconductor    The transistor   
File Size32KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SD1887C Overview

TRANSISTOR,BJT,NPN,700V V(BR)CEO,10A I(C),TO-247VAR

2SD1887C Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)5
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)80 W
surface mountNO
Base Number Matches1
Ordering number : ENN7126
2SD1887C
NPN Triple Diffused Planar Silicon Transistor
2SD1887C
Color TV Horizontal Deflection
Output Applications
Features
Package Dimensions
unit : mm
2174A
[2SD1887C]
16.0
3.4
5.6
3.1
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
5.0
21.0
4.0
22.0
8.0
2.8
2.0
20.4
0.7
1
2
5.45
3
0.9
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
5.45
Conditions
3.5
0.8
2.1
Ratings
1500
700
5
10
25
3.0
80
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
ICBO
ICES
VCEO(sus)
IEBO
Conditions
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VBE=4V, IC=0
700
1.0
Ratings
min
typ
max
10
1.0
Unit
µA
mA
V
mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3445 No.7126-1/4

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2SD1887C
Description TRANSISTOR,BJT,NPN,700V V(BR)CEO,10A I(C),TO-247VAR
Reach Compliance Code compli
Maximum collector current (IC) 10 A
Configuration Single
Minimum DC current gain (hFE) 5
Maximum operating temperature 150 °C
Polarity/channel type NPN
Maximum power dissipation(Abs) 80 W
surface mount NO
Base Number Matches 1
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