IMS1403LN35M datasheet, PDF - EEWORLD Datasheet

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IMS1403LN35M: DescriptionStandard SRAM, 16KX1, 35ns, CMOS, CQCC20,; Categorystorage storage; File Size288KB，9 Pages; ManufacturerInmos Corporation

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IMS1403LN35M Overview

Standard SRAM, 16KX1, 35ns, CMOS, CQCC20,

IMS1403LN35M Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Inmos Corporation
Reach Compliance Code	unknown
Maximum access time	35 ns
I/O type	SEPARATE
JESD-30 code	R-XQCC-N20
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of terminals	20
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX1
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	QCCN
Encapsulate equivalent code	LCC20,.3X.43
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Minimum standby current	2 V
Maximum slew rate	0.075 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD

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IMS1403LN35M Related Products

	IMS1403LN35M	IMS1403LS45M	IMS1403S-35M	IMS1403N-55M	IMS1403S-55M
Description	Standard SRAM, 16KX1, 35ns, CMOS, CQCC20,	Standard SRAM, 16KX1, 40ns, CMOS, CDIP20,	Standard SRAM, 16KX1, 35ns, CMOS, CDIP20,	Standard SRAM, 16KX1, 50ns, CMOS, CQCC20,	Standard SRAM, 16KX1, 50ns, CMOS, CDIP20,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Inmos Corporation	Inmos Corporation	Inmos Corporation	Inmos Corporation	Inmos Corporation
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum access time	35 ns	40 ns	35 ns	50 ns	50 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-XQCC-N20	R-XDIP-T20	R-XDIP-T20	R-XQCC-N20	R-XDIP-T20
JESD-609 code	e0	e0	e0	e0	e0
memory density	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	1	1	1	1
Number of terminals	20	20	20	20	20
word count	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	16KX1	16KX1	16KX1	16KX1	16KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC
encapsulated code	QCCN	DIP	DIP	QCCN	DIP
Encapsulate equivalent code	LCC20,.3X.43	DIP20,.3	DIP20,.3	LCC20,.3X.43	DIP20,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	IN-LINE	IN-LINE	CHIP CARRIER	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B
Minimum standby current	2 V	2 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.075 mA	0.075 mA	0.075 mA	0.075 mA	0.075 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	YES	NO	NO	YES	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	THROUGH-HOLE
Terminal pitch	1.27 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm
Terminal location	QUAD	DUAL	DUAL	QUAD	DUAL

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