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BD830

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size354KB,8 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BD830 Overview

Transistor,

BD830 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)75 MHz

BD830 Related Products

BD830 BD826 BD828
Description Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 1 A 1 A 1 A
Configuration Single Single Single
Minimum DC current gain (hFE) 40 40 40
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 2 W 2 W 2 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 75 MHz 75 MHz 75 MHz
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