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2SA2031

Description
15A, 230V, PNP, Si, POWER TRANSISTOR, TO-3PB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size35KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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2SA2031 Overview

15A, 230V, PNP, Si, POWER TRANSISTOR, TO-3PB, 3 PIN

2SA2031 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-3PB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)15 A
Collector-emitter maximum voltage230 V
ConfigurationSINGLE
Minimum DC current gain (hFE)35
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1
Ordering number : ENN6586A
2SA2031 / 2SC5669
2SA2031 / 2SC5669
Features
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
230V / 15A, AF100W
Output Applications
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
Specifications
Note*( ) : 2SA2031
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(-)250
(-)230
(-)6
(-)15
(-)30
2.5
140
150
-55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)250V, IE=0
VEB=(--)4V, IC=0
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)7.5A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
VCE=(--)5V, IC=(--)7.5A
IC=(--)7.5A, IB=(--)0.75A
IC=(--)5mA, IE=0
IC=(--)50mA, RBE=∞
IE=(--)5mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
(--)250
(--)230
(--)6
(0.45)0.56
(1.75)3.3
(0.25)0.4
60
35
(10)15
(400)200
1.5
(-
-0.3)0.2
(--)2.0
MHz
pF
V
V
V
V
V
µs
µs
µs
Ratings
min
typ
max
(--)0.1
(--)0.1
160
Unit
mA
mA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503 TS IM TA-100930 / 61500 TS IM TA-2927 No.6586-1/4

2SA2031 Related Products

2SA2031 2SC5669
Description 15A, 230V, PNP, Si, POWER TRANSISTOR, TO-3PB, 3 PIN 15A, 230V, NPN, Si, POWER TRANSISTOR, TO-3PB, 3 PIN
Is it Rohs certified? conform to conform to
Parts packaging code TO-3PB TO-3PB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 15 A 15 A
Collector-emitter maximum voltage 230 V 230 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 35 35
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 10 MHz 15 MHz
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