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SS56C

Description
Rectifier Diode, Schottky, 1 Element, 5A, 60V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size155KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

SS56C Overview

Rectifier Diode, Schottky, 1 Element, 5A, 60V V(RRM),

SS56C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage60 V
Maximum reverse current500 µA
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL

SS56C Preview

BL
FEATURES
GALAXY ELECTRICAL
SS52C- - -SS56C
REVERSE VOLTAGE: 20 --- 60 V
CURRENT:
5.0
A
DO - 214AB(SMC)
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
Plastic package has Underwriters Laborator
111
Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
High current capability,low forward voltage drop
Low power loss,high effciency
For use in low voltage high frequency inverters,free
111
wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250oC/10
1
11
seconds at terminals
MECHANICAL DATA
Case:JEDEC DO-214AB,molded plastic over
1111
passivated chip
Terminals:Solder Plated, solderable per MIL-STD-750,
1111
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified
SS52C
Dev ice marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
SS53C
S3C
30
21
30
SS54C
S4C
40
28
40
5.0
175
SS55C
S5C
50
35
50
SS56C
UNITS
S6C
60
42
60
V
V
V
A
A
S2C
V
RRM
V
RWS
V
DC
20
14
20
Maximum average forw ord rectified current at
I
(AV)
c
T
L
(SEE FIG.1) (NOTE 2)
Peak forw ard surge current 8.3ms single half-
sine-w ave superimposed on rated load(JEDEC
I
FSM
c
Method)
Maximum instantaneous forw ard voltage at
V
F
v
5.0A(NOTE.1)
Maximum DC reverse current @T
A
=25℃
at rated DC blockjing voltage(NOTE1) @T
A
=100℃
Typical thermal resitance (NOTE2)
Operating junction and storage temperature range
Storage temperature range
0.55
0.5
20
0.70
V
mA
I
R
R
θ
JA
R
θ
JL
T
STG
T
J
-65--- +150
10
55
17
-65--- +150
-65--- +150
/W
www.galaxycn.com
NOTE: 1.Pulse test:300μS pulse width,1%duty cycle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm2)copper pad areas
Document Number 0281012
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
8.0
SS52C- - -SS56C
FIG.2-- PEAK FORWARD SURGE CURRENT
SS52C-SS54C
SS55C-SS56C
Resistive or
inductive Load
200
PEAK FORWARD SURGE
CURRENT,AMPERES
175
150
125
100
75
50
25
0
1
5
6.0
P.C.B.MOUNTED ON
0.55"X0.55"(14.0X14.0mm)
COPPERPAD AREAS
T
J
=T
J
MAX.
8.3ms Single Half Sine-Wave
(JEDEC Method)
4.0
2.0
0
50
60
70
80
90 100 110 120 130 140
150 160
10
50
100
AMBIENT TEMPERATURE
NUMBER OF CYCLES AT 60H
Z
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
30.0
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
20
10
INSTANTANEOUS FORWARD
CURRENT,AMPERES
INSTANTANEOUS REVERSE
CURRENT,MICROAMPERES
T
J
=125 C
0
T
J
=125 C
10.0
T
J
=150
O
C
Puise Width=300 S
1%DUTY CYCLE
O
1
0
T
J
=75 C
1
0.1
SS52C-SS54C
SS55C-SS56C
0.1
T
J
=25 C
O
0.01
T
J
=25 C
0
0.01
0
SS52C-SS54C
SS55C-SS56C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-- TYPICAL TRANSIENT THERMAL IMPEDANCE
JUNCTION CAPACLTANCE pF
1000
TRANSIENT THERMAL
T
J
=25
O
C
f=1.0MHz
Vsig=50mVp-p
100
IMPEDANCE ℃/ W
10
100
1
SS52C-SS54C
SS55C-SS56C
10
0.1
1.0
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
PULSE DURATION,SEC
www.galaxycn.com
Document Number 0281012
BL
GALAXY ELECTRICAL
2.

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