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MR756RL

Description
6A, 600V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size189KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MR756RL Overview

6A, 600V, SILICON, RECTIFIER DIODE

MR756RL Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse current25 µA
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MR750/D
High Current Lead Mounted
Rectifiers
Current Capacity Comparable to Chassis Mounted Rectifiers
Very High Surge Capacity
Insulated Case
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 2.5 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Lead is
Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Polarity: Cathode Polarity Band
Shipped 1000 units per plastic bag. Available Tape and Reeled, 800 units
per reel by adding a “RL’’ suffix to the part number
Marking: R750, R751, R752, R754, R758, R760
Data Sheet
MR750
MR751
MR752
MR754
MR756
MR758
MR760
MR754 and MR760 are
Motorola Preferred Devices
HIGH CURRENT
LEAD MOUNTED
SILICON RECTIFIERS
50–1000 VOLTS
DIFFUSED JUNCTION
CASE 194–04
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non–Repetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
RMS Reverse Voltage
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz)
See Figures 5 and 6
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions)
Operating and Storage Junction
Temperature Range
Symbol
VRRM
VRWM
VR
VRSM
VR(RMS)
IO
MR750
50
MR751
100
MR752
200
MR754
400
MR756
600
MR758
800
MR760
1000
Unit
Volts
60
35
120
70
240
140
480
280
720
420
960
560
1200
700
Volts
Volts
Amps
22 (TL = 60°C, 1/8″ Lead Lengths)
6.0 (TA = 60°C, P.C. Board mounting)
IFSM
TJ, Tstg
400 (for 1 cycle)
Amps
°C
*
65 to +175
Symbol
vF
VF
IR
Max
1.25
0.90
25
1.0
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions
Maximum Instantaneous Forward Voltage Drop
(iF = 100 Amps, TJ = 25°C)
Maximum Forward Voltage Drop
(IF = 6.0 Amps, TA = 25°C, 3/8″ leads)
Maximum Reverse Current
(Rated dc Voltage)
TJ = 25°C
TJ = 100°C
Unit
Volts
Volts
µA
mA
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Rev 2
Rectifier Device Data
©
Motorola, Inc. 1996
1

MR756RL Related Products

MR756RL MR760RL MR750RL MR751RL MR752RL MR754RL MR758RL
Description 6A, 600V, SILICON, RECTIFIER DIODE 6A, 1000V, SILICON, RECTIFIER DIODE 6A, 50V, SILICON, RECTIFIER DIODE 6A, 100V, SILICON, RECTIFIER DIODE 6A, 200V, SILICON, RECTIFIER DIODE 6A, 400V, SILICON, RECTIFIER DIODE 6A, 800V, SILICON, RECTIFIER DIODE
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V 1.25 V 1.25 V 1.25 V 1.25 V 1.25 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A 400 A 400 A 400 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 6 A 6 A 6 A 6 A 6 A 6 A 6 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 1000 V 50 V 100 V 200 V 400 V 800 V
Maximum reverse current 25 µA 25 µA 25 µA 25 µA 25 µA 25 µA 25 µA
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
JESD-609 code e0 - e0 e0 e0 e0 -
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
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