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JAN2N3996

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size295KB,5 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin

JAN2N3996 Parametric

Parameter NameAttribute value
package instructionPOST/STUD MOUNT, O-MUPM-D4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-111
JESD-30 codeO-MUPM-D4
Number of components1
Number of terminals4
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
GuidelineMIL
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.25 V
Base Number Matches1
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