Transistors
2SA0720A
(2SA720A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1318A
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
0.7
±0.1
Unit: mm
5.0
±0.2
4.0
±0.2
0.7
±0.2
12.9
±0.5
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−80
−70
−5
−
0.5
−1
625
150
−55
to
+150
Unit
V
V
2.3
±0.2
0.45
+0.15
–0.1
2.5
+0.6
–0.2
1
2 3
5.1
±0.2
0.45
+0.15
–0.1
2.5
+0.6
–0.2
V
A
A
mW
°C
°C
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −10
V, I
C
= −500
mA
I
C
= −300
mA, I
B
= −30
mA
I
C
= −300
mA, I
B
= −30
mA
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−80
−70
−5
Typ
Max
Unit
V
V
V
−
0.1
85
40
−
0.2
−
0.85
120
20
30
−
0.6
−1.50
240
µA
V
V
MHz
pF
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*1
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurment
*2: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJC00003BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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Consult our sales staff in advance for information on the following applications:
•
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•
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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