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SRM9TX

Description
Rectifier Diode, 1 Phase, 1 Element, 20A, 900V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size154KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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SRM9TX Overview

Rectifier Diode, 1 Phase, 1 Element, 20A, 900V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

SRM9TX Parametric

Parameter NameAttribute value
MakerSSDI
package instructionE-XALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-XALF-W2
Maximum non-repetitive peak forward current375 A
Number of components1
Phase1
Number of terminals2
Maximum output current20 A
Package body materialUNSPECIFIED
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage900 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SRM5
thru
SRM10
20 AMPS
500 - 1000 VOLTS
5
μsec
STANDARD RECOVERY
RECTIFIER
FEATURES:
Replace DO-4 or DO-5
Standard Recovery: 5μsec maximum
PIV to 1000 Volts
Low Reverse Leakage Current
Hermetically Sealed Void-Free Construction
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Available in Surface Mount Version
Equivalent to 5961-94022
TX, TXV, and Space Level Screening Available
2/
Designer’s Data Sheet
Part Number/Ordering Information
1/
SRM
__ __
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Voltage
5 = 500V
6 = 600V
7 = 700V
8 = 800V
9 = 900V
10 = 1000V
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SRM5
SRM6
SRM7
SRM8
SRM9
SRM10
Symbol
V
RRM
V
RWM
V
R
Value
500
600
700
800
900
1000
20
375
-65 to +175
3
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25
o
C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on I
O
, Allow
Junction to Reach Equilibrium Between Pulses, T
A
= 25
o
C)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Lead, L = 3/8”
NOTES:
1/ For Ordering Information, Price, and Availability – Contact Factory.
2/ PIND Testing not required on Void-Free Devices per MIL-PRF-19500
Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
I
O
I
FSM
T
OP
& T
stg
R
θJL
Amps
Amps
o
o
C
C/W
Axial
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0046G
DOC

SRM9TX Related Products

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Description Rectifier Diode, 1 Phase, 1 Element, 20A, 900V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 20A, 500V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 20A, 500V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 20A, 500V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 20A, 700V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 20A, 700V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 20A, 700V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 20A, 900V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 20A, 900V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
Maker SSDI SSDI SSDI SSDI SSDI SSDI SSDI SSDI SSDI
package instruction E-XALF-W2 HERMETIC SEALED PACKAGE-2 E-XALF-W2 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2
Contacts 2 2 2 2 2 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code E-XALF-W2 E-XALF-W2 E-XALF-W2 E-XALF-W2 E-XALF-W2 E-XALF-W2 E-XALF-W2 E-XALF-W2 E-XALF-W2
Maximum non-repetitive peak forward current 375 A 375 A 375 A 375 A 375 A 375 A 375 A 375 A 375 A
Number of components 1 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2
Maximum output current 20 A 20 A 20 A 20 A 20 A 20 A 20 A 20 A 20 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 900 V 500 V 500 V 500 V 700 V 700 V 700 V 900 V 900 V
Maximum reverse recovery time 5 µs 5 µs 5 µs 5 µs 5 µs 5 µs 5 µs 5 µs 5 µs
surface mount NO NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL

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