Power Transistors
2SA1096, 2SA1096A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC2497, 2SC2497A
φ
3.16
±0.1
3.8
±0.3
Unit: mm
8.0
+0.5
–0.1
3.2
±0.2
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SA1096
(Base open)
2SA1096A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−70
−50
−60
−5
−2
−3
1.2
150
−55
to
+150
V
A
A
W
°C
°C
Unit
0.75
±0.1
V
V
4.6
±0.2
0.5
±0.1
0.5
±0.1
2.3
±0.2
3
1.76
±0.1
1
2
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage
(Base open)
2SA1096
2SA1096A
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −1
A
I
C
= −1.5
A, I
B
= −
0.15 A
I
C
= −1.5
A, I
B
= −
0.15 A
V
CB
= −5
V, I
E
=
0.5 A, f
=
200 MHz
V
CB
= −20
V, I
E
=
0, f
=
1 MHz
150
55
80
Symbol
V
CBO
V
CEO
Conditions
I
C
= −1
mA, I
E
=
0
I
C
= −2
mA, I
B
=
0
Min
−70
−50
−60
−1
−100
−10
220
−1
−1.5
µA
µA
µA
V
V
MHz
pF
Typ
Max
Unit
V
V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1,2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
80 to 160
R
120 to 220
16.0
±1.0
•
Output of 5 W can be obtained by a complementary pair with
2SC2497 and 2SC2497A
•
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9
±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
±0.1
■
Features
11.0
±0.5
Publication date: February 2003
SJD00007BED
1
2SA1096, 2SA1096A
P
C
T
a
1.6
−4
T
C
=
25°C
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
V
CE(sat)
I
C
I
C
/ I
B
= 10
Collector power dissipation P
C
(W)
I
B
= −50
mA
Collector current I
C
(A)
1.2
−3
−45
mA
−40
mA
−35
mA
−30
mA
−25
mA
−20
mA
−1
0.8
−2
T
C
= 100°C
25°C
–25°C
0.4
−1
−15
mA
−10
mA
−5
mA
−
0.1
0
0
40
80
120
160
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.01
−
0.1
–1
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
Base-emitter saturation voltage V
BE(sat)
(V)
−10
I
C
/ I
B
= 10
h
FE
I
C
240
V
CE
= –5 V
f
T
I
E
V
CB
= –5 V
f = 200 MHz
T
C
= 25°C
1 000
Forward current transfer ratio h
FE
T
C
= 100°C
25°C
Transition frequency f
T
(MHz)
200
−1
T
C
= –25°C
100°C
25°C
160
100
–25°C
120
−
0.1
10
80
40
−
0.01
−
0.01
−
0.1
–1
1
−
0.01
−
0.1
−1
0
0.01
0.1
1
10
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
240
V
CER
R
BE
Collector-emitter voltage
(V)
(Resistor between B and E) V
CER
I
E
= 0
f = 1 MHz
T
C
= 25°C
I
CBO
T
a
10
4
V
CB
= –40 V
−100
I
C
= –10 mA
T
C
= 25°C
200
−80
10
3
−60
I
CBO
(T
a
)
I
CBO
(T
a
=
25°C)
1
10
100
160
120
10
2
−40
80
40
−20
10
0
−1
−10
−100
0
0.1
1
0
40
80
120
160
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
Ambient temperature T
a
(°C)
2
SJD00007BED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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2002 JUL
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