Transistors
2SB1036
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
4.0
±0.2
2.0
±0.2
(0.8)
3.0
±0.2
Unit: mm
■
Features
•
Optimum for high-density mounting
•
Allowing supply with the radial taping
•
Low noise voltage NV
0.75 max.
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−120
−120
−5
−20
−50
300
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
°C
°C
1
2
3
0.45
+0.20
–0.10
(2.5) (2.5)
0.45
+0.20
–0.10
0.7
±0.1
15.6
±0.5
(0.8)
7.6
1: Emitter
2: Collector
3: Base
NS-B1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
NV
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
CE
= −5
V, I
C
= −2
mA
I
C
= −20
mA, I
B
= −2
mA
V
CB
= −5
V, I
E
=
2 mA, f
=
200 MHz
V
CE
= −40
V, I
C
= −1
mA, G
V
=
80 dB
R
g
=
100 kΩ, Function
=
FLAT
200
150
180
Min
−120
−120
−5
−100
−1
520
−
0.6
Typ
Max
Unit
V
V
V
nA
µA
V
MHz
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
180 to 360
S
260 to 520
Publication date: March 2003
SJC00066BED
1
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and semiconductors described in this material
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•
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•
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