FCH47N60 / FCA47N60
FCH47N60 / FCA47N60
Features
• 650V @T
J
= 150°C
• Typ. Rds(on)=0.058Ω
• Ultra low gate charge (typ. Qg=210nC)
• Low effective output capacitance (typ. Coss.eff=420pF)
• 100% avalanche tested
SuperFET
Description
SuperFET
TM
is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
December 2006
TM
D
G
G D
S
TO-247
FDH Series
TO-3P
G DS
FDA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FCH47N60
600
FCA47N60
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
47
29.7
141
±
30
1800
47
41.7
4.5
417
3.33
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.3
--
41.7
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
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FCH47N60 / FCA47N60 Rev.B
FCH47N60 / FCA47N60
Package Marking and Ordering Information
Device Marking
FCH47N60
FCA47N60
FCA47N60
Device
FCH47N60
FCA47N60
FCA47N60_F109
Package
TO-247
TO-3P
TO-3PN
T
C
= 25°C unless otherwise noted
Reel Size
-
-
-
Tape Width
-
-
-
Quantity
30
30
30
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
ΔBV
DSS
/
ΔT
J
BV
DS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Conditions
V
GS
= 0V, I
D
= 250μA, T
J
= 25°C
V
GS
= 0V, I
D
= 250μA, T
J
= 150°C
I
D
= 250μA, Referenced to 25°C
V
GS
= 0V, I
D
= 47A
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125°C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 23.5A
V
DS
= 40V, I
D
= 23.5A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
(Note 4)
Min
600
--
--
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
(Note 4, 5)
Typ
--
650
0.6
700
--
--
--
--
--
0.058
40
5900
3200
250
160
420
185
210
520
75
210
38
110
Max Units
--
--
--
--
1
10
100
-100
5.0
0.07
--
8000
4200
--
--
--
430
450
1100
160
270
--
--
V
V
V/°C
V
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
On Characteristics
Dynamic Characteristics
V
DS
= 480V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V to 400V, V
GS
= 0V
V
DD
= 300V, I
D
= 47A
R
G
= 25Ω
Switching Characteristics
--
--
--
--
V
DS
= 480V, I
D
= 47A
V
GS
= 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 47A
V
GS
= 0V, I
S
= 47A
dI
F
/dt =100A/μs
(Note 4)
--
--
--
--
--
--
--
--
590
25
47
141
1.4
--
--
A
A
V
ns
μC
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 18A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
47A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300μs, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCH47N60 / FCA47N60 Rev. B
2
www.fairchildsemi.com
FCH47N60 / FCA47N60
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top :
Figure 2. Transfer Characteristics
10
2
I
D
, Drain Current [A]
I
D
, Drain Current [A]
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10
2
150 C
10
1
o
10
1
25 C
-55 C
* Note
1. V
DS
= 40V
2. 250
μ
s Pulse Test
o
o
10
0
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25 C
o
10
0
10
-1
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.20
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
I
DR
, Reverse Drain Current [A]
R
DS(ON)
[
Ω
],Drain-Source On-Resistance
0.15
10
2
V
GS
= 10V
0.10
10
1
V
GS
= 20V
0.05
150 C
o
25 C
* Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
o
* Note : T
J
= 25 C
o
10
200
0
0.00
0
20
40
60
80
100
120
140
160
180
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
30000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
Figure 6. Gate Charge Characteristics
12
V
DS
= 100V
V
GS
, Gate-Source Voltage [V]
25000
C
rss
= C
gd
10
V
DS
= 250V
V
DS
= 400V
Capacitance [pF]
20000
C
oss
15000
* Notes :
1. V
GS
= 0 V
2. f = 1 MHz
8
6
10000
C
iss
4
5000
C
rss
2
* Note : I
D
= 47A
0
-1
10
10
0
10
1
0
0
50
100
150
200
250
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FCH47N60 / FCA47N60 Rev. B
3
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FCH47N60 / FCA47N60
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
3.0
Figure 8. On-Resistance Variation
vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
R
DS(ON)
, (Normalized)
2.0
1.0
1.5
0.9
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
1.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 47 A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
10
2
Operation in This Area
is Limited by R
DS(on)
100 us
40
I
D
, Drain Current [A]
10
1
10 ms
DC
I
D
, Drain Current [A]
3
1 ms
30
10
0
20
10
-1
* Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
10
10
-2
10
0
10
1
10
2
10
0
25
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 10. Transient Thermal Response Curve
(t), Thermal Response
D = 0 .5
10
-1
* N o te s :
0 .2
0 .1
0 .0 5
0 .0 2
10
-2
1 . Z
θ
J C
( t) = 0 .3
o
C /W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t)
P
DM
t
1
s in g le p u ls e
10
-4
θ
JC
Z
t
2
0 .0 1
10
-5
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FCH47N60 / FCA47N60 Rev. B
4
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FCH47N60 / FCA47N60
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH47N60 / FCA47N60 Rev. B
5
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