Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
MT-200 package
・Complement
to type 2SD745/745A/745B
APPLICATIONS
・Audio
frequency power amplifier
・Suitable
for output stages of 60~120W audio
amplifiers and voltage regulators
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SB705/705A/705B
・
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
固电
导½
半
PARAMETER
CONDITIONS
2SB705
2SB705A
V
CBO
Collector-base voltage
V
CEO
HA
INC
Emitter-base voltage
Collector current
ES
NG
2SB705B
2SB705
2SB705A
2SB705B
Open emitter
MIC
E
OR
UCT
ND
O
VALUE
-140
-150
-160
-140
-150
-160
UNIT
V
Collector-emitter voltage
Open base
V
V
EBO
I
C
I
CM
P
T
T
j
T
stg
Open collector
-5
-10
-15
V
A
A
W
℃
℃
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
120
150
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB705
V
(BR)CEO
Collector-emitter
breakdown voltage
2SB705A
2SB705B
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
I
C
=-5A;I
B
=-0.5 A
I
C
=-5A;I
B
=-0.5 A
V
CB
=-140V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-50mA ; V
CE
=-5V
I
C
=-2A ; V
CE
=-5V
I
C
=-25mA; I
B
=0
CONDITIONS
2SB705/705A/705B
MIN
-140
-150
-160
TYP.
MAX
UNIT
V
-1.5
-2.0
-50
-50
20
V
V
μA
μA
固电
IN
DC current gain
导½
半
Transition frequency
Output capacitance
h
FE-2
classifications
S
40-80
R
60-120
ANG
CH
Q
100-200
MIC
E SE
I
C
=-0.2A ; V
CE
=-5V
OR
UCT
ND
O
40
200
17
430
MHz
pF
I
E
=0; V
CB
=-10V;f=1MHz
2
京公网安备 11010802033920号
EEWORLD
