Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1071 2SB1071A
DESCRIPTION
・With
TO-220Fa package
・Low
collector saturation voltage
・High
speed switching
APPLICATIONS
・For
low voltage switching applications
PINNING
PIN
1
2
3
Emitter
Collector
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
固电
导½
半
PARAMETER
CONDITIONS
2SB1071
2SB1071A
Collector-base voltage
V
CEO
V
EBO
I
C
I
CM
INC
Collector -emitter voltage
ANG
H
2SB1071
MIC
E SE
Open emitter
Open base
Open collector
OR
UCT
ND
O
VALUE
-40
-50
-20
-40
-5
-4
-8
UNIT
V
V
2SB1071A
Emitter-base voltage
Collector current
Collector current-peak
V
A
A
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.0
W
25
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB1071
V
(BR)CEO
Collector-emitter
breakdown voltage
2SB1071A
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
I
C
=-2A; I
B
=-0.1A
I
C
=-2A; I
B
=-0.1A
V
CB
=-40V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-5V
I
C
=-10mA ,I
B
=0
CONDITIONS
2SB1071 2SB1071A
MIN
-20
TYP.
MAX
UNIT
V
-40
-0.5
-1.5
-50
-50
45
60
260
150
V
V
μA
μA
Switching times
t
on
t
stg
t
f
固电
IN
Q
Transition frequency
导½
半
Turn-on time
Storage time
Fall time
ANG
CH
P
130-260
MIC
E SE
I
C
=-2A; I
B1
=-I
B2
=-0.2A
DUC
ON
OR
T
MHz
0.3
0.4
0.1
μs
μs
μs
h
FE-2
Classifications
R
60-120
90-180
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1071 2SB1071A
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
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