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FDA70N20

Description
70 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size850KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDA70N20 Overview

70 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET

FDA70N20 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-3PN
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging code3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)1742 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)70 A
Maximum drain current (ID)70 A
Maximum drain-source on-resistance0.035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)417 W
Maximum pulsed drain current (IDM)280 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FDA70N20 200V N-Channel MOSFET
UniFET
FDA70N20
200V N-Channel MOSFET
Features
• 70A, 200V, R
DS(on)
= 0.035Ω @V
GS
= 10 V
• Low gate charge ( typical 66 nC)
• Low C
rss
( typical 89 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
G
TO-3P
G DS
FDA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FDA70N20
200
70
45
280
±30
1742
70
41.7
4.5
417
3.3
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.3
--
40
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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