Transistors
2SC5609
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2021
■
Features
Unit: mm
0.33
+0.05
–0.02
3
0.10
+0.05
–0.02
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
High forward current transfer ratio h
FE
•
SSS-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
0.23
+0.05
–0.02
1
2
(0.40) (0.40)
0.80
±0.05
1.20
±0.05
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
ue
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
h
FE1
h
FE2
f
T
V
EBO
tin
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
ce
Collector-base cutoff current (Emitter open)
an
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
C
ob
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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5˚
0.15 min.
Rating
60
50
7
Unit
V
V
V
0 to 0.01
0.52
±0.03
5˚
100
200
100
125
mA
mA
°C
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
mW
°C
Marking Symbol: 3F
−55
to
+125
Conditions
Min
60
Typ
Max
Unit
V
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
on
50
7
V
isc
V
/D
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
0.1
µA
µA
V
100
Ma
int
en
V
CE
=
10 V, I
C
=
2 mA
180
90
390
V
CE
=
2 V, I
C
=
100 mA
I
C
=
100 mA, I
B
= 10
mA
0.1
80
0.3
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
MHz
pF
3.5
0.15 max.
0.15 min.
0.80
±0.05
1.20
±0.05
Publication date: March 2003
SJC00185BED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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–
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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