Transistors
2SA1790
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC4626
■
Features
Unit: mm
0.2
+0.1
–0.05
3
0.15
+0.1
–0.05
M
Di ain
sc te
on na
tin nc
ue e/
d
•
High transition frequency f
T
•
SS-Mini type package allowing downsizing of the equipment and
automatic insertion through the tape packing
0.8
±0.1
1.6
±0.15
1˚
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
P
C
T
j
Collector-base voltage (Emitter open)
0 to 0.1
0.45
±0.1
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
BE
Base-emitter saturation voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
e/
Forward current transfer ratio
*
na
nc
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
(Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
B
70 to 140
C
110 to 220
Publication date: March 2003
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1
(0.5) (0.5)
1.0
±0.1
1.6
±0.1
2
(0.4)
5˚
Rating
−30
−20
−5
−30
125
125
Unit
V
V
(0.3)
V
mA
°C
mW
°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
T
stg
−55
to
+125
Marking Symbol: E
Conditions
Min
Typ
0.75
±0.15
Max
V
CE
= −10 µA,
I
C
= −1
mA
V
CB
= −10
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
−
0.7
0.2
±0.1
Unit
V
µA
µA
V
I
CBO
I
CEO
I
EBO
h
FE
f
T
−
0.1
−100
−10
220
Di
sc
on
µA
V
CE
=
−10
V, I
C
=
−1
mA
I
C
= −10
mA, I
B
= −1
mA
70
V
CE(sat)
NF
Z
rb
C
re
−
0.1
300
2.8
22
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
5 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
2 MHz
150
MHz
dB
Ω
pF
te
4.0
60
M
ain
V
CB
= −10
V, I
E
=
1 mA, f
=
10.7 MHz
1.2
2.0
SJC00031BED
1
2SA1790
P
C
T
a
150
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
−30
Collector power dissipation P
C
(mW)
125
−25
Collector current I
C
(mA)
100
−20
I
B
= −250 µA
−200 µA
−10
M
Di ain
sc te
on na
tin nc
ue e/
d
75
−15
−150 µA
−100 µA
−1
T
a
=
75°C
25°C
−25°C
50
−10
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
h
FE
I
C
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
120
V
CE
= −10
V
Forward current transfer ratio h
FE
T
a
=
75°C
Transition frequency f
T
(MHz)
100
80
25°C
60
−25°C
40
20
0
−
0.1
−1
−10
−100
Collector current I
C
(mA)
C
re
V
CE
Di
Common emitter reverse transfer capacitance C
re
(pF)
5
na
nc
I
C
= −1
mA
f
=
10.7 MHz
T
a
=
25°C
4
16
3
Noise figure NF (dB)
Power gain G
P
(dB)
2
1
0
−1
−10
−100
Collector-emitter voltage V
CE
(V)
2
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0
0
−2
−4
−6
−8
−10
−
0.01
−
0.1
−1
−10
−100
25
−5
−50 µA
−
0.1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
f
T
I
E
C
ob
V
CB
600
6
V
CB
= −10
V
T
a
=
25°C
500
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
400
4
300
3
200
2
100
1
0
0.1
1
10
100
0
−
0.1
−1
−10
−100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
sc
on
G
P
I
C
NF
I
E
24
20
V
CE
= −10
V
f
=
100 MHz
T
a
=
25°C
5
V
CB
= −10
V
f
=
100 MHz
T
a
=
25°C
e/
4
ain
te
3
M
12
2
8
4
1
0
−
0.1
−1
−10
−100
0
0.1
1
10
Collector current I
C
(mA)
Emitter current I
E
(mA)
SJC00031BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
tin
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Pl
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ico L d d e
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du
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ct
d
na t l
life
so ate
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nic st
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.co inf
sta
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/e a
n/ tio
.
n.
M
ain
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M
Di ain
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Di
sc
on
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