datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Analog mixed-signal IC> Drivers and interfaces> IR21281PBF
PDF
Preview

IR21281PBF

Description
Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDIP8, PLASTIC, DIP-8
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size159KB，15 Pages
ManufacturerInternational Rectifier （ Infineon ）
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IR21281PBF Overview

Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDIP8, PLASTIC, DIP-8

IR21281PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier （ Infineon ）
Parts packaging codeDIP
package instructionDIP, DIP8,.3
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
high side driverYES
Interface integrated circuit typeBUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 codeR-PDIP-T8
JESD-609 codee3
length9.88 mm
Number of functions1
Number of terminals8
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Nominal output peak current0.5 A
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
power supply15 V
Certification statusNot Qualified
Maximum seat height5.33 mm
Maximum supply voltage20 V
Minimum supply voltage10 V
Nominal supply voltage15 V
surface mountNO
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
Disconnect time0.2 µs
connection time0.25 µs
width7.62 mm

IR21281PBF Preview

Data Sheet No. PD60143K
IR2127/IR2128
IR21271/IR21281
CURRENT SENSING SINGLE CHANNEL DRIVER
Features
•
Floating channel designed for bootstrap operation
•
Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
Application- specific gate drive range:
Motor Drive: 12 to 20V (IR2127/IR2128)
Automotive: 9 to 20V (IR21271/IR21281)
Undervoltage lockout
5V Schmitt-triggered input logic
FAULT
lead indicates shutdown has occured
Output in phase with input (IR2127/IR21271)
Product Summary
V
OFFSET
I
O
+/-
V
OUT
V
CSth
t
on/off
(typ.)
600V max.
200 mA / 420 mA
12 - 20V or 9 - 20V
250 mV or 1.8V
200 & 150 ns
•
•
•
•
•
Output out of phase with input (IR2128/IR21281)
Description
The IR2127/IR2128/IR21271/IR21281 is a high volt-
age, high speed power MOSFET and IGBT driver. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL out-
puts. The protection circuity detects over-current in the
driven power transistor and terminates the gate drive
voltage. An open drain
FAULT
signal is provided to
indicate that an over-current shutdown has occurred.
The output driver features a high pulse current buffer
stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side or low side
configuration which operates up to 600 volts.
Packages
8 Lead PDIP
8 Lead SOIC
Typical Connection
V
CC
IN
FAULT
V
CC
IN
FAULT
COM
V
B
HO
CS
V
S
IR2127/IR21271
V
CC
IN
FAULT
V
CC
IN
FAULT
COM
V
B
HO
CS
V
S
IR2128/IR21281
www.irf.com
1
IR2127/IR2128
IR21271/IR21281
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
IN
V
FLT
V
CS
dV
s
/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High Side Floating Supply Voltage
High Side Floating Offset Voltage
High Side Floating Output Voltage
Logic Supply Voltage
Logic Input Voltage
FAULT Output Voltage
Current Sense Voltage
Allowable Offset Supply Voltage Transient
Package Power Dissipation @ T
A
≤
+25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-0.3
V
S
- 0.3
—
—
—
—
—
—
-55
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
CC
+ 0.3
V
B
+ 0.3
50
1.0
0.625
125
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
Symbol
V
B
V
S
V
HO
V
CC
V
IN
V
FLT
V
CS
T
A
Definition
High Side Floating Supply Voltage
High Side Floating Offset Voltage
High Side Floating Output Voltage
Logic Supply Voltage
Logic Input Voltage
FAULT Output Voltage
Current Sense Signal Voltage
Ambient Temperature
(IR2127/IR2128)
(IR21271/IR21281)
Min.
V
S
+ 12
V
S
+ 9
Note 1
V
S
10
0
0
V
S
-40
Max.
V
S
+ 20
V
S
+ 20
600
V
B
20
V
CC
V
CC
V
S
+ 5
125
Units
V
°C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
.
2
www.irf.com
IR2127/IR2128
IR21271/IR21281
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figure 3.
Symbol
t
on
t
off
t
r
t
f
t
bl
t
cs
t
flt
Definition
Turn-On Propagation Delay
Turn-Off Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
Start-Up Blanking Time
CS Shutdown Propagation Delay
CS to FAULT Pull-Up Propagation Delay
Min.
—
—
—
—
500
—
—
Typ. Max. Units Test Conditions
200
150
80
40
700
240
340
250
200
130
65
900
360
510
ns
V
S
= 0V
V
S
= 600V
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to V
S
.
Symbol
V
IH
V
IL
V
CSTH+
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
I
CS+
I
CS-
V
BSUV+
V
BSUV-
I
O+
I
O-
Ron, FLT
Definition
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic “0” Input Voltage
Logic “1” Input Voltage
CS Input Positive
Going Threshold
Low Level Output Voltage, V
O
Offset Supply Leakage Current
Quiescent V
BS
Supply Current
Quiescent V
CC
Supply Current
Logic “1” Input Bias Current
Logic “0” Input Bias Current
“High” CS Bias Current
“High” CS Bias Current
V
BS
Supply Undervoltage
Positive Going Threshold
V
BS
Supply Undervoltage
Negative Going Threshold
(IR2127/IR2128)
(IR21271/IR21281)
(IR2127/IR2128)
(IR21271/IR21281)
(IR2127/IR21271)
(IR2128/IR21281)
(IR2127/IR21271)
(IR2128/IR21281)
(IR2127/IR2128)
(IR21271/IR21281)
Min.
3.0
—
180
—
—
—
—
—
—
—
—
—
—
8.8
6.3
7.5
6.0
200
420
—
Typ. Max. Units Test Conditions
—
—
250
1.8
—
—
—
200
60
7.0
—
—
—
10.3
7.2
9.0
6.8
250
500
125
—
V
0.8
320
—
100
100
50
400
120
15
1.0
1.0
1.0
11.8
8.2
10.6
7.7
—
mA
—
—
Ω
V
O
= 0V, V
IN
= 5V
PW
≤
10 µs
V
O
= 15V, V
IN
= 0V
PW
≤
10 µs
µA
mV
V
mV
I
O
= 0A
I
O
= 0A
V
B
= V
S
= 600V
V
IN
= 0V or 5V
V
IN
= 5V
V
IN
= 0V
V
CS
= 3V
V
CS
= 0V
V
CC
= 10V to 20V
High Level Output Voltage, V
BIAS
- V
O
V
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
FAULT - Low on Resistance
www.irf.com
3
IR2127/IR2128
IR21271/IR21281
Functional Block Diagram IR2127/IR21271
V
CC
UV
DETECT
UP
SHIFTERS
IN
PULSE
GEN
V
B
DELAY
FAULT
PULSE
FILTER
DOWN
SHIFTER
PULSE
GEN
Q
R
S
-
+
CS
V
S
HV
LEVEL
SHIFT
V
B
R
R
S
Q
BUFFER
PULSE
FILTER
HO
Q
R
S
COM
Functional Block Diagram IR2128/IR21281
V
B
UV
DETECT
UP
SHIFTERS
IN
PULSE
GEN
V
B
DELAY
FAULT
PULSE
FILTER
DOWN
SHIFTER
PULSE
GEN
Q
R
S
-
+
CS
V
S
HV
LEVEL
SHIFT
V
CC
5V
R
R
S
Q
BUFFER
PULSE
FILTER
HO
Q
R
S
COM
4
www.irf.com
IR2127/IR2128
IR21271/IR21281
Lead Definitions
Symbol
V
CC
IN
FAULT
COM
V
B
HO
V
S
CS
Description
Logic and gate drive supply
Logic input for gate driver output (HO), in phase with HO (IR2127/IR21271)
out of phase with HO (IR2128/IR21281)
Indicates over-current shutdown has occurred, negative logic
Logic ground
High side floating supply
High side gate drive output
High side floating supply return
Current sense input to current sense comparator
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2127/IR21271
IR2127S/IR21271S
8 Lead PDIP
8 Lead SOIC
IR2128/IR21281
www.irf.com
IR2128S/IR21281S
5
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

IR21281PBF Related Products

IR21281PBF IR21281SPBF IR21281S
Description Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDIP8, PLASTIC, DIP-8 Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDSO8, SOIC-8 Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDSO8, SOIC-8
Is it Rohs certified? conform to conform to incompatible
Maker International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ）
Parts packaging code DIP SOIC SOIC
package instruction DIP, DIP8,.3 SOP, SOP8,.25 SOP, SOP8,.25
Contacts 8 8 8
Reach Compliance Code unknown unknown compliant
ECCN code EAR99 EAR99 EAR99
high side driver YES YES YES
Interface integrated circuit type BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 code R-PDIP-T8 R-PDSO-G8 R-PDSO-G8
JESD-609 code e3 e3 e0
length 9.88 mm 4.9 mm 4.9 mm
Number of functions 1 1 1
Number of terminals 8 8 8
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Nominal output peak current 0.5 A 0.5 A 0.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP SOP SOP
Encapsulate equivalent code DIP8,.3 SOP8,.25 SOP8,.25
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED
power supply 15 V 15 V 15 V
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 5.33 mm 1.75 mm 1.75 mm
Maximum supply voltage 20 V 20 V 20 V
Minimum supply voltage 10 V 10 V 10 V
Nominal supply voltage 15 V 15 V 15 V
surface mount NO YES YES
technology CMOS CMOS CMOS
Temperature level AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING GULL WING
Terminal pitch 2.54 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 30 NOT SPECIFIED
Disconnect time 0.2 µs 0.2 µs 0.2 µs
connection time 0.25 µs 0.25 µs 0.25 µs
width 7.62 mm 3.9 mm 3.9 mm

Recommended Resources

XTR101 internal functional principle and basic application circuit

DK-1 type control box uses AC power electromagnet closing circuit

Time relay controls auto-coupling step-down starting circuit

Voltage stabilizing circuit diagram with simultaneous adjustment of positive and negative voltages

Circuit after breakdown of selenium rectifier in current cut-off link

Output temperature transmitter

Please advise how to connect the OCL circuit
Could you please tell me what are the differences between the following three OCL circuit connection methods? The first is the classic connection method in textbooks, where the base of the latter stag...
宋黑子 Analog electronics
JJG52-1999 Verification procedures for spring tube type general pressure gauges, pressure vacuum gauges and vacuum gauges
JJG52-1999 Verification procedures for spring tube type general pressure gauges, pressure vacuum gauges and vacuum gauges...
天天向上 Test/Measurement
HDMI
Awesome file...
syx12345 Download Centre
Shanghai recruits several Korean-speaking technical support engineers with a starting salary of 10,000
Position prefers a Bachelor of Science Degree in Computer Science, Engineering, or equivalent industry related experience. Familiarity with Customer Service Technical Support and/or customer facing/or...
guoluren200907 Recruitment
Chuangrui Communication Technology (Shanghai) recruits embedded software engineers
Senior Software Engineer (Network Protocol Software) Atheros Communications is a leading developer of semiconductor system solutions. The Atheros software development team is looking for an individual...
turtle_haha Embedded System
What will cause the following failure of CD54HCT00F3A?
As shown in the figure, we use the first NAND gate of CD54HCT00F3A to receive the input signal, and the output of the second NAND gate is used as the chip select signal (CS is low valid). When point 1...
twl99 Analogue and Mixed Signal
Shortcut:   A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components

  1. M38025E3-768FP
  2. 2SD1484KT147R
  3. MKP383336100JFM2B0
  4. SIP-4709-01-9311-G
  5. Q16P3BPXXR02E
  6. RNR55E5171DPM76
  7. 222286772399
  8. 99A2D-G16-H28/R71L
  9. 1.5SMC8.2CAT/R7
  10. TPC116S8
  11. D3961HB-14P-BL-G30
  12. RLM102-141N

Popular Articles

  1. Installation Instructions for Magnetic Flange Level Gauge with Remote Transmission
  2. 51 MCU-LCD screen code explanation
  3. ST monolithic GaN gate drivers accelerate industrial and home automation and increase flexibility
  4. 24-Design of 4x4 calculator based on 51 single chip microcomputer
  5. Taiwan's three major IC substrate manufacturers responded to Suzhou power restrictions: no major impact for now
  6. Xiaomi helps the OLED TV market explode
  7. ATmega16 ADC Noise Suppression Mode
  8. STMicroelectronics' third-generation silicon carbide drives the development of electric vehicles and industrial applications
  9. Zao Gao FENG: iOS/iPadOS 15.3 first public beta released/Safari technology preview updated
  10. Detailed explanation of the ground wire problem of the oscilloscope

Technical ResourceMore

  1. 270 Examples of Quick Radio Repairs
  2. Design of demodulation module for wireless weather fax software receiver
  3. DC Chopper Circuit Electronic Teaching Plan
  4. Sony KV-21SE82C Color TV Repair Manual
  5. Freescale Smart Car Data
  6. CMMB wireless network test parameters and methods
  7. Research on Real-time Software Development Method
  8. Embedded security system
  9. FPGA Design Process Guide.
  10. High-speed digital circuit PCB design considerations

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 1485  1779  2640  369  2155  30  36  54  8  44 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号