FDD3682
September 2002
FDD3682
N-Channel PowerTrench
®
MOSFET
100V, 32A, 36mΩ
Features
• r
DS(ON)
= 32mΩ (Typ.), V
GS
= 10V, I
D
= 32A
• Q
g
(tot) = 18.5nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Q
RR
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82755
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System
DRAIN
(FLANGE)
GATE
SOURCE
D
G
TO-252AA
FDD SERIES
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 100 C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θJA
= 52
o
C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
Parameter
Ratings
100
±20
32
23
5.5
Figure 4
55
95
0.63
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
1.58
100
52
o
o
o
C/W
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Package Marking and Ordering Information
Device Marking
FDD3682
Device
FDD3682
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
=
±20V
T
C
= 150 C
o
100
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 32A, V
GS
= 10V
r
DS(ON)
Drain to Source On Resistance
I
D
= 16A, V
GS
= 6V
I
D
= 32A, V
GS
= 10V,
T
C
= 175
o
C
2
-
-
-
-
0.032
0.040
0.080
4
0.036
0.060
0.090
Ω
V
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 32A
I
g
= 1.0mA
-
-
-
-
-
-
-
-
1250
190
45
18.5
2.4
6.5
4.1
4.6
-
-
-
28
3.6
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 50V, I
D
= 32A
V
GS
= 10V, R
GS
= 16Ω
-
-
-
-
-
-
-
9
46
24
26
-
83
-
-
-
-
75
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 32A
I
SD
= 16A
I
SD
= 32A, dI
SD
/dt = 100A/µs
I
SD
= 32A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
55
92
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 0.27mH, I
AS
= 20A.
©2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
35
30
I
D
, DRAIN CURRENT (A)
25
20
15
10
5
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
P
DM
0.1
t
1
t
2
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
Figure 3. Normalized Maximum Transient Thermal Impedance
400
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
DM
, PEAK CURRENT (A)
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 10V
100
30
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Typical Characteristics
T
C
= 25°C unless otherwise noted
200
100
I
D
, DRAIN CURRENT (A)
10
1
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
200
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
1.2
I
D
= 250µA
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120
o
0.9
160
200
-80
-40
0
40
80
120
o
160
200
T
J
, JUNCTION TEMPERATURE ( C)
T
J
, JUNCTION TEMPERATURE ( C)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
2000
1000
C, CAPACITANCE (pF)
C
OSS
≅
C
DS
+ C
GD
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 50V
8
C
ISS
=
C
GS
+ C
GD
6
C
RSS
=
C
GD
100
4
2
V
GS
= 0V, f = 1MHz
20
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 32A
I
D
= 16A
0
5
10
Qg, GATE CHARGE (nC)
15
20
0
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
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