This P-Channel 2.5V specified MOSFET is in a rugged
gate version
®
of Fairchild Semiconductor's advanced
®
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
Features
–11 A, –20 V. R
DS(ON)
= 0.014
R
DS(ON)
= 0.020
@ V
GS
= –4.5 V
@ V
GS
= –2.5 V
•
•
•
•
Extended V
GSS
range ( 12V) for battery applications.
Low gate charge (43nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
Applications
•
Load switch
•
Battery protection
•
Power management
•
High power and current handling capability.
•
RoHS Compliant.
D
5
6
4
3
2
1
MOSFET
D
D
D
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
A
=25
o
C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
Ratings
–20
12
–11
–50
2.5
1.2
1.0
–55 to +150
Units
V
V
A
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
R
R
R
JA
JA
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
C/W
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDS6576
Device
FDS6576
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2006 Fairchild Semiconductor Corporation
FDS6576 Rev E3
FDS6576 P-Channel 2.5V Specified PowerTrench
Electrical Characteristics
Symbol
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250 A
I
D
= –250 A, Referenced to 25 C
V
DS
= –16 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
V
GS
= –12 V, V
DS
= 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–13
–1
100
–100
mV/ C
A
nA
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250 A
I
D
= –250 A, Referenced to 25 C
V
GS
= –4.5 V,
I
D
= –11 A
V
GS
= –2.5 V,
I
D
= –8.8 A
V
GS
= –4.5 V, I
D
= –11 A, T
J
=125 C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –4.5 V,
I
D
= –11 A
–0.6
–0.83
3.5
8.2
11.5
11.1
–1.5
V
mV/ C
14
20
23
m
I
D(on)
g
FS
–25
50
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
4044
955
504
pF
pF
pF
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V,
R
GEN
= 6
18
17
124
79
32
31
198
126
60
ns
ns
ns
ns
nC
nC
nC
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –11 A,
43
7
12
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –2.1 A
Voltage
–2.1
(Note 2)
A
V
–0.66
–1.2
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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