Ordering number:ENN1413D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1371/2SC3468
High-Definition CRT Display,
Video Output Applications
Use
· Color TV chroma output and high breakdown voltage
driver.
Package Dimensions
unit:mm
2006B
[2SA1371/2SC3468]
6.0
5.0
Features
· High breakdown votage : V
CEO
≥300V.
· Small reverse transfer capacitance and excellent high
frequency characteristic
: C
re
=1.8pF (NPN), 2.3pF (PNP).
· Adoption of MBIT process.
4.7
0.5
0.6
6.0
14.0
3.0
8.5
0.5
0.5
1 2 3
( ) : 2SA1371
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.45
1.45
1 : Emitter
2 : Collector
3 : Base
SANYO :MP
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1.0
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
40*
150
(–)0.6
(–)1.0
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
320*
MHz
V
V
Unit
µA
µA
* : The 2SA1371/2SC3468 are classified by 10mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
F
160 to 320
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502AS (KT)/71598HA (KT)/3237KI/3135KI/1114KI, MT No.1413-1/5
2SA1371/2SC3468
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
Cob
Cre
IE=(–)10µA, IC=0
VCB=(–)30V, f=1MHz
VCB=(–)30V, f=1MHz
Conditions
Ratings
min
(–)300
(–)300
(–)5
2.6
(3.1)
1.8
(2.3)
typ
max
Unit
V
V
V
pF
pF
pF
pF
--
20
--
18
IC -- VCE
2SA1371
20
18
IC -- VCE
2SC3468
120
µA
--140
µA
--120
µA
--100µA
Collector Current, IC – mA
--
14
--
12
--
10
--
8
--
6
--
4
--
2
0
0
Collector Current, IC – mA
--
16
16
14
100µA
--80
µA
--60µA
80µA
12
10
8
60µA
--40µA
--20µA
40µA
6
4
2
20µA
IB=0
--
1
--
2
--
3
--
4
--
5
--
6
--
7
--
8
--
9
--
10
Collector-to-Emitter Voltage, VCE – V
ITR03305
0
IB=0
0
1
2
3
4
5
6
7
8
9
10
Collector-to-Emitter Voltage, VCE – V
10
9
ITR03306
--
10
--
9
IC -- VCE
2SA1371
--60µA
--50
µ
A
IC -- VCE
2SC3468
60
µ
A
50
µA
Collector Current, IC – mA
--
7
--
6
--
5
--
4
--
3
--
2
--
1
0
0
Collector Current, IC – mA
--
8
8
7
6
5
4
--40µA
40
µA
30
µA
--30
µA
--20µA
20µA
3
2
1
--10µA
10µA
IB=0
--
10
--
20
--
30
--
40
--
50
--
60
--
70
--
80
--
90
--
100
Collector-to-Emitter Voltage, VCE – V
ITR03307
0
IB=0
0
10
20
30
40
50
60
70
80
90
100
Collector-to-Emitter Voltage, VCE – V
1000
ITR03308
1000
7
5
hFE -- IC
2SA1371
VCE=--10V
hFE -- IC
2SC3468
VCE=10V
Ta=75
°C
7
5
3
2
DC Current Gain, hFE
2
25
°C
DC Current Gain, hFE
3
Ta=75
°C
25
°C
--25
°C
100
7
5
3
2
--25
°C
100
7
5
3
2
10
5
7
--
1.0
2
2
5
3
--
10
Collector Current, IC – mA
3
5
7
7
--
100
2
10
5
7
1.0
2
3
5
7 10
2
3
5
7
ITR03309
Collector Current, IC – mA
2
100
ITR03310
No.1413-2/5
2SA1371/2SC3468
1000
fT -- IC
2SA1371
VCE=--30V
1000
fT -- IC
2SC3468
VCE=30V
Gain-Bandwidth Product, fT – MHz
5
3
2
Gain-Bandwidth Product, fT – MHz
7
7
5
3
2
100
7
5
3
2
100
7
5
3
2
10
5
7
--
1.0
2
2
3
5
--
10
Collector Current, IC – mA
3
5
7
7
--
100
2
10
5
7 1.0
2
3
5
7
10
2
3
5
ITR03311
3
2
3
2
Cob -- VCB
Collector Current, IC – mA
7 100
2
ITR03312
Cob -- VCB
2SA1371
f=1MHz
2SC3468
f=1MHz
Output Capacitance, Cob – pF
Output Capacitance, Cob – pF
10
7
5
3
2
10
7
5
3
2
1.0
7
5
5 7
1.0
7
--
1.0
2
3
5
7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03313
7
2
3
5
5
5 7 1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
3
7 100
2
ITR03314
3
Cre -- VCB
Reverse Transfer Capacitance, Cre – pF
2SA1371
f=1MHz
Cre -- VCB
2SC3468
f=1MHz
Reverse Transfer Capacitance, Cre – pF
2
2
10
7
5
3
2
10
7
5
3
2
1.0
7
5
5
7
1.0
7
5
5
7 1.0
2
3
5
7
10
2
3
5
7 100
2
ITR03316
--
1.0
2
3
5 7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03315
7
2
3
5
Collector-to-Base Voltage, VCB -- V
10
7
5
--
10
7
VCE(sat) -- IC
2SA1371
IC / IB=10
VCE(sat) -- IC
2SC3468
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
5
7
2
2 3
5
--
10
Collector Current, IC – mA
3
5
7
7
2
5
3
2
3
2
1.0
7
5
3
2
0.1
7
5
3
5
7 1.0
2
3
5
7
10
2
3
5
7 100
2
ITR03318
--
1.0
7
5
3
2
--
0.1
7
5
--
1.0
--
100
ITR03317
Collector Current, IC – mA
No.1413-3/5
2SA1371/2SC3468
--
10
7
VBE(sat) -- IC
2SA1371
IC / IB=10
10
7
VBE(sat) -- IC
2SC3468
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
5
3
2
3
2
--
1.0
7
5
1.0
7
5
3
5
7
--
1.0
2
2
3
--
10
Collector Current, IC – mA
3
5
7
5
7
--
100
2
3
5
7 1.0
2
3
5
7 10
2
3
5
ITR03319
3
2
Collector Current, IC – mA
7 100
2
ITR03320
120
IC -- VBE
2SA1371 / 2SC3468
VCE=10V
(For PNP, minus sign is omitted.)
Ta=75
°
C
ASO
ICP=200mA
IC=100mA
2SA1371 / 2SC3468
s
0
µ
50
s
1 m
ms
10
Collector Current, IC – mA
Collector Current, IC – mA
100
100
7
5
3
2
--25
°
C
25
°
C
80
DC
60
op
era
tio
n
40
10
7
5
3
20
0
0
0.2
0.4
0.6
0.8
1.0
ITR03321
2
(For PNP, minus sign is omitted.)
5
7
Base-to-Emitter Voltage, VBE – V
1.2
Collector-to-Emitter Voltage, VCE – V
10
2
3
5
7
100
2
3
5
ITR03322
PC -- Ta
2SA1371 / 2SC3468
Collector Dissipation, P
C
– W
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR03323
No.1413-4/5
2SA1371/2SC3468
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2002. Specifications and information herein are
subject to change without notice.
PS No.1413-5/5
TI Technology Forum
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