Ordering number:EN1057B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1257/2SC3143
High-Voltage Switching, AF Power Amp,
100W Output Predriver Applications
Features
· Very small-sized package permitting the 2SA1257/
2SC3143-applied sets to be made small and slim.
· High breakdown voltage (V
CEO
≥160V).
· Small output capacitance.
Switching Time Test Circuit
Package Dimensions
unit:mm
2018A
[2SA1257/2SC3143]
( ) : 2SA1257
Specifications
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current Pulse
Collector Dissipation
Junction Temperature
Storage Temperature
I
C
=10I
B1
=–10I
B2
=10mA
(For PNP, the polarity is reversed)
Unit (resistance :
Ω,
capacitance : F)
C : Collector
B : Base
E : Emitter
SANYO : CP
Absolute Maximum Ratings
at Ta = 25˚C
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)180
(–)160
(–)5
(–)80
(–)150
200
125
–55 to +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VBE
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
VCB=(–)10V, f=1MHz
VCE=(–)5V, IC=(–)10mA
(–)180
(–)160
(–)5
(0.15)
0.18
(0.95)
1.00
(0.15)
0.20
60*
(130)
150
(2.4)
2.0
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
270*
MHz
(3.2)
2.8
(–)1.5
(–)0.7
pF
V
V
V
V
V
µs
µs
µs
Unit
µA
µA
VCE(sat) IC=(–)30mA, IB=(–)3mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
* : The 2SA1257/2SC3143 are classified by 10mA h
FE
as follows :
60
G3
120
90
G4
180
135
G5
270
Marking 2SA1257 : G, 2SC3143 : K, h
FE
rank : 3, 4, 5
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/7148MO/3187AT/D103KI, MT No.1057-1/4
2SA1257/2SC3143
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1998. Specifications and information herein are subject to
change without notice.
PS No.1057-4/4
京公网安备 11010802033920号
EEWORLD
