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2N5016

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size18KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

2N5016 Overview

Transistor

2N5016 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)4.5 A
ConfigurationSingle
Minimum DC current gain (hFE)10
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)30 W
surface mountNO
Nominal transition frequency (fT)500 MHz
Base Number Matches1
2N5016
NPN SILICON POWER TRANSISTOR
DESCRIPTION:
The
ASI 2N5016
is Designed for
Class A,B,C Amplifier,Oscillator and
Driver Applications Covering the
VHF-UHF Region.
PACKAGE STYLE TO- 60
FEATURES INCLUDE:
Grounded Emitter
High Power output
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ
JC
4.5 A
65 V
30 W @ T
C
= 25 °C
-65°C to +200 °C
-65°C to +200 °C
5.8°C/W
1 = EMITTER
2 = BASE
3 = COLLECTOR
CHARACTERISTICS
SYMBOL
BV
CER
BV
CEV
BV
EBO
I
CEO
V
CE(SAT)
C
ob
f
t
P
out
η
Z
IN
T
C
= 25 °C
TEST CONDITIONS
I
C
= 200 Ma
V
BE
= -1.5 V
I
C
= 5.0 mA
V
CE
= 30 V
I
C
= 200 mA
V
CB
= 30 V
V
CE
= 15 V
V
CE
= 28 V
I
C
= 500 mA
P
in
= 5.0 W
I
B
= 400 mA
f = 1.0 MHz
f = 100 MHz
f = 400 MHz
R
BE
= 30
I
C
= 200 mA
MINIMUM TYPICAL MAXIMUM
40
65
4.0
1.0
1.0
25
600
15
50
2.5 + j5
UNITS
V
V
V
mA
V
pF
MHz
W
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
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