INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC2656
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 400V(Min)
·High
Switching Speed
·High
Reliability
APPLICATIONS
·Switching
regulators
·DC-DC
converter
·Solid
state relay
·General
purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
w
.cn
i
em
cs
.is
w
w
VALUE
450
UNIT
V
400
400
7
V
V
V
7
A
2
80
150
-55~150
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.5
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
I
C
= 10mA ; I
B
= 0
I
C
= 1A ; I
B
= 0
I
C
= 1mA ; I
E
= 0
I
E
= 0.1mA ; I
C
= 0
I
C
= 7A; I
B
= 1.4A
B
2SC2656
MIN
400
400
450
7
TYP.
MAX
UNIT
V
V
V
V
1.5
1.2
1.0
0.1
V
V
mA
mA
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
w
.cn
i
em
cs
.is
w
w
B
I
C
= 7A; I
B
= 1.4A
V
CB
= 450V; I
E
=0
V
EB
= 7V; I
C
=0
I
C
= 3A; V
CE
= 4V
10
1.5
3.0
1.5
μs
μs
μs
I
C
= 7A , I
B1
= -I
B2
= 1.4A
R
L
= 30Ω;P
W
=20μs
Duty Cycle≤2%
isc Website：www.iscsemi.cn
2
京公网安备 11010802033920号
EEWORLD
