Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1381
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SD2079
・Low
collector saturation voltage
・High
DC current gain
APPLICATIONS
・High
power switching applications
・Hammer
drive,pulse motor drive applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
固电
IN
导½
半
Fig.1 simplified outline (TO-220F) and symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-100
-100
-7
-5
-8
-0.5
UNIT
V
V
V
A
A
A
Base current
T
a
=25℃
2
W
30
150
-55~150
℃
℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-30mA ;I
B
=0
I
C
=-2.5A; I
B
=-5mA
I
C
=-5A; I
B
=-20mA
I
C
=-2.5A; I
B
=-5mA
V
CB
=-100V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-2.5A ; V
CE
=-3V
I
C
=-7A ; V
CE
=-3V
1500
500
MIN
-100
2SB1381
TYP.
MAX
UNIT
V
-1.5
-3.0
-2.5
-100
-2.5
15000
V
V
V
μA
mA
Switching times
t
on
t
s
t
f
固电
Fall time
导½
半
Turn-on time
Storage time
IN
ANG
CH
MIC
E SE
I
B1
=-I
B2
=-5mA
V
CC
=-25V ,R
L
=10Ω
OR
UCT
ND
O
0.8
2.5
2.0
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1381
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
京公网安备 11010802033920号
EEWORLD
