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2SD2695(TPE6)

Description
TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,2A I(C),TO-92VAR
CategoryDiscrete semiconductor    The transistor   
File Size147KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SD2695(TPE6) Overview

TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,2A I(C),TO-92VAR

2SD2695(TPE6) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)2 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.9 W
surface mountNO
Base Number Matches1
2SD2695
TOSHIBA Transistor
Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2695
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
High DC current gain: h
FE
= 2000 (min) (V
CE
= 2 V, I
C
= 1 A)
Low saturation voltage: V
CE (sat)
= 1.5 V (max) (I
C
= 1 A, I
B
= 1 mA)
Zener diode included between collector and base
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
60 ± 10
8
2
0.5
0.9
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1
2009-12-21

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