Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
R
DS(ON)
PARAMETER
BUK444
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
MAX.
-200A
200
5.3
25
0.4
MAX.
-200B
200
4.7
25
0.5
UNIT
V
A
W
Ω
PINNING - SOT186
PIN
1
2
3
gate
drain
source
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
hs
= 25 ˚C
T
hs
= 100 ˚C
T
hs
= 25 ˚C
T
hs
= 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
-200A
5.3
3.3
21
25
150
150
MAX.
200
200
30
-200B
4.7
3.0
19
UNIT
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
-
TYP.
-
55
MAX.
5
-
UNIT
K/W
K/W
April 1993
1
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
PARAMETER
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
V
DS
= V
GS
; I
D
= 1 mA
V
DS
= 200 V; V
GS
= 0 V; T
j
= 25 ˚C
V
DS
= 200 V; V
GS
= 0 V; T
j
=125 ˚C
V
GS
=
±30
V; V
DS
= 0 V
V
GS
= 10 V;
BUK444-200A
BUK444-200B
I
D
= 3.5 A
MIN.
200
2.1
-
-
-
-
-
TYP.
-
3.0
1
0.1
10
0.35
0.4
MAX.
-
4.0
10
1.0
100
0.4
0.5
UNIT
V
V
µA
mA
nA
Ω
Ω
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
s
PARAMETER
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
CONDITIONS
V
DS
= 25 V; I
D
= 3.5 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
V
DD
= 30 V; I
D
= 2.9 A;
V
GS
= 10 V; R
GS
= 50
Ω;
R
gen
= 50
Ω
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
3.5
-
-
-
-
-
-
-
-
-
TYP.
5.0
700
100
50
12
45
80
40
4.5
7.5
MAX.
-
850
160
80
20
70
120
60
-
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
12
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
DR
I
DRM
V
SD
t
rr
Q
rr
PARAMETER
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
-
-
I
F
= 5.3 A ; V
GS
= 0 V
I
F
= 5.3 A; -dI
F
/dt = 100 A/µs;
V
GS
= 0 V; V
R
= 30 V
MIN.
-
-
-
-
-
TYP.
-
-
1.1
150
0.9
MAX.
5.3
21
1.3
-
-
UNIT
A
A
V
ns
µC
April 1993
2
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
AVALANCHE LIMITING VALUE
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 9 A ; V
DD
≤
100 V ;
V
GS
= 10 V ; R
GS
= 50
Ω
MIN.
-
TYP.
-
MAX.
50
UNIT
mJ
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
with heatsink compound
100
ID / A
BUK444-200A,B
10
S(
RD
O
=
N)
S
VD
/ID
A
B
tp = 10 us
100 us
1 ms
1
DC
10 ms
100 ms
0
20
40
60
80
Ths / C
100
120
140
0.1
1
10
100
VDS / V
1000
10000
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
hs
)
ID%
Normalised Current Derating
with heatsink compound
Fig.3. Safe operating area. T
hs
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Zth / (K/W)
D=
0.5
1
0.2
0.1
0.05
0.1
0.02
P
D
t
p
D=
t
p
T
t
1E+01
BUKx44-lv
120
110
100
90
80
70
60
50
40
30
20
10
0
10
0
20
40
60
80
Ths / C
100
120
140
0.01
1E-07
0
1E-05
1E-03
t/s
T
1E-01
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
hs
); conditions: V
GS
≥
10 V
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
April 1993
3
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
20
ID / A
VGS / V =
20
10
BUK444-200A
8
6
5
gfs / S
BUK454-200A
15
7
10
6
2
4
3
5
5
0
4
20
1
0
0
2
4
6
8
10 12
ID / A
14
16
18
20
0
2
4
6
8
10 12
VDS / V
14
16
18
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
BUK454-200A
6
6.5
7
VGS / V =
7.5
8
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
a
Normalised RDS(ON) = f(Tj)
1.5
RDS(ON) / Ohm
4.5 5
5.5
1.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0.5
20
0
0
2
4
6
8
10 12
ID / A
14
16
18
20
-60 -40 -20
0
20
40 60
Tj / C
80
100 120 140
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
ID / A
BUK454-200A
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 3.5 A; V
GS
= 10 V
VGS(TO) / V
4
max.
20
Tj / C =
15
25
150
3
typ.
10
min.
2
5
1
0
0
0
2
4
VGS / V
6
8
10
-60
-40
-20
0
20
40
60
Tj / C
80
100
120
140
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
April 1993
4
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
1E-01
ID / A
SUB-THRESHOLD CONDUCTION
20
IF / A
BUK454-200A
1E-02
15
1E-03
2%
typ
98 %
10
1E-04
Tj / C = 150
5
25
1E-05
1E-06
0
1
2
VGS / V
3
4
0
0
1
VSDS / V
2
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
BUK4y4-200
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
WDSS%
10000
C / pF
120
110
100
90
1000
Ciss
80
70
60
50
100
Coss
Crss
40
30
20
10
0
10
0
20
VDS / V
40
20
40
60
80
100
Ths / C
120
140
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
hs
); conditions: I
D
= 9 A
12
10
8
6
4
2
0
VGS / V
BUK454-200
VDS / V =40
+
L
VDS
VGS
0
RGS
T.U.T.
R 01
shunt
VDD
160
-
-ID/100
0
4
8
12
16
QG / nC
20
24
28
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 9 A; parameter V
DS
Fig.16. Avalanche energy test circuit.
2
W
DSS
=
0.5
⋅
LI
D
⋅
BV
DSS
/(BV
DSS
−
V
DD
)
April 1993
5
Rev 1.100
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