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DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD16886
MONOLITHIC 1.5-CHANNEL H BRIDGE DRIVER CIRCUIT FOR CAMERAS
DESCRIPTION
The
µ
PD16886 is a monolithic H bridge driver LSI that employs N-channel MOSFETs in its output stage.
This IC incorporates a 1.5-channel H bridge circuit and can control two motors that do not operate at the same
time. In addition, forward/reverse, brake, and stop functions are available, making this LSI ideal for driving motors
such as the motor for winding the camera film and the lens zoom motor.
FEATURES
Large output current
I
D(DC)
= 1.0 A
I
D(pulse)
= 2.8 A
I
D(pulse)
= 2.2 A
On-chip 1.5-channel H bridge circuit
Low on-resistance
R
ON
= 0.5
Ω
max. Sum of the top and bottom on-resistance, total temperature range
On-chip standby circuit to set the charge pump circuit to OFF
Low-voltage operation is possible (operable at 2.7 V or higher)
On-chip undervoltage lockout circuit
Mounted in a small-scale package
24-pin plastic TSSOP
During continuous operation
PW
≤
20 ms, during single operation
PW
≤
200 ms, during single operation
ORDERING INFORMATION
Part Number
Package
24-pin plastic TSSOP (5.72 mm (225))
µ
PD16886MA-6A5
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. S14844EJ2V0DS00 (2nd edition)
Date Published May 2002 N CP(K)
Printed in Japan
©
2002
µ
PD16886
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C: MOUNTED ON GLASS EPOXY BOARD 100 mm
×
100 mm
×
1 mm, COPPER FILM AREA: 15%)
°
Parameter
Supply voltage
Symbol
V
DD
V
M
When charge pump operating
At V
G
external input
V
G
pin apply voltage
Input voltage
Output current (DC)
Output current (pulse)
Output current (pulse)
Power consumption
Peak junction temperature
Storage temperature
V
G
V
IN
I
D(DC)
I
D(pulse)
I
D(pulse)
P
T
T
J(MAX)
T
stg
During successive operation
PW < 20 ms, single pulse
PW < 200 ms, single pulse
At V
G
external input
Conditions
Ratings
−0.5
to +6.0
−0.5
to +4.0
−0.5
to +6.0
8.0
−0.5
to V
DD
+ 0.5
±1.0
±2.8
±2.2
0.7
150
−55
to +150
V
V
A
A
A
W
°C
°C
Unit
V
V
RECOMMENDED OPERATING CONDITIONS
(T
A
= 25°C: MOUNTED ON GLASS EPOXY BOARD 100 mm
×
100 mm
×
1 mm, COPPER FILM AREA: 15%)
°
Parameter
Supply voltage
Symbol
V
DD
V
M
V
G
pin apply voltage
Output current (DC)
Output current (pulse)
Output current (pulse)
Charge pump capacitor capacitance
Operating ambient temperature
Peak junction temperature
V
G
I
D(DC)
I
D(pulse)
I
D(pulse)
C
1
to C
3
T
A
T
J(MAX)
−20
During successive operation
PW < 20 ms, single pulse
PW < 200 ms, single pulse
0.01
+75
125
Conditions
MIN.
2.7
1.6
V
M
+ 3.5
TYP.
MAX.
5.5
3.6
7.5
0.8
2.5
2.0
Unit
V
V
V
A
A
A
µ
F
°C
°C
ELECTRICAL SPECIFICATIONS (UNLESS OTHERWISE SPECIFIED, T
A
= 25°C, V
DD
= V
M
= 3.0 V)
°
Parameter
V
DD
pin current
Symbol
I
DD
I
DD(STB)
V
M
pin current in off state
Input voltage, high
Input voltage, low
Input pull-down resistor
Output on-resistance
I
MOFF
V
IH
V
IL
R
IND
R
ON
−20°C ≤
T
A
≤
75°C
I
D
= 0.8 A
C
1
= C
2
= C
3
= 0.01
µ
F
0.8
C
1
= C
2
= C
3
= 0.01
µ
F
I
D
= 0.8 A, see
Figures 1
and
2
200
0.35
0.5
STB = V
DD
STB = GND
Control pin at low level
1.8
Conditions
MIN.
TYP.
MAX.
2.0
1.0
1.0
V
DD
0.8
Unit
mA
µ
A
µ
A
V
V
kΩ
Ω
Low voltage detection voltage
Charge pump circuit turn-on time
H bridge circuit turn-on time
H bridge circuit turn-off time
V
DDS
t
ONC
t
ON
t
OFF
2.5
1.0
5.0
5.0
V
ms
µ
s
µ
s
The output is high impedance during low-voltage detection.
=
The V
G
pin voltage when using the charge pump is V
G
. .
V
M
+ 3.6 V.
2
Data Sheet S14844EJ2V0DS
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