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2SC3320G-C-T3P-T

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size200KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

2SC3320G-C-T3P-T Overview

Power Bipolar Transistor

2SC3320G-C-T3P-T Parametric

Parameter NameAttribute value
package instructionTO-3P, 3 PIN
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Maximum collector current (IC)15 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO.,LTD
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING
FEATURES
* High voltage, high speed switching
* High reliability
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
2SC3320L-x-T3P-T
2SC3320L-x-T3P-T
TO-3P
2SC3320L-x-T3N-T
2SC3320L-x-T3N-T
TO-3PN
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MARKING INFORMATION
PACKAGE
TO-3P
TO-3PN
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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