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2SB1495

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size225KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SB1495 Overview

Transistor

2SB1495 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
2SB1495
DESCRIPTION
·High
DC Current Gain-
: h
FE
=
2000(Min)@ (V
CE
= -2V, I
C
= -2A)
·Low-Collector
Saturation Voltage-
: V
CE(
sat
)
= -1.5V(Max.)@I
C
= -1.5A
·Complement
to Type 2SD2257
APPLICATIONS
·Designed
for high power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
-100
V
-100
V
-8
V
-3
A
-5
A
-0.3
A
2
W
I
CM
Collector Current-Pulse
I
B
Base Current-Continuous
Collector Power Dissipation
@T
a
=25℃
P
C
Collector Power Dissipation
@T
C
=25℃
T
J
Junction Temperature
20
150
T
stg
Storage Temperature
-55~150
isc Website:www.iscsemi.cn
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